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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7016L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 220mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 25 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70T3399S200BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 525mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 200MHz | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 34b | 2 Mb | 0.015A | COMMON | Synchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 71V3558S166PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 360mA | 166MHz | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 18b | 4.5 Mb | 0.045A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | IDT71016S20PHI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.17mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 20 ns | COMMON | 4.5V | 5.5V | 4.5V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 71V65703S75BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 20 | COMMERCIAL | Parallel | 1 | 0.275mA | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | 7.5 ns | COMMON | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
 | 70V26L55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 120mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 55 ns | 14b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
 | 7005S20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 290mA | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.155A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70V657S10DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 500mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 128kB | 2 | 10 ns | 3-STATE | 30b | 1.1 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 7142LA25JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 220mA | RAM, SDR, SRAM | 2007 | 活跃 | 85°C | -40°C | 5V | Parallel | 2kB | 2 | 25 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
 | 7054L25PRFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 300mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 85°C | -40°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | FLAT | 225 | 1 | 0.5mm | 5V | INDUSTRIAL | Parallel | 4 | 25 ns | 3-STATE | 12b | 32 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71V124SA20TYG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e3 | 3 (168 Hours) | 32 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.095mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | |||||||||||||||||||||||||||
 | 70V261S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 170mA | RAM, SDR, SRAM | 2001 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 25 ns | 28b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
 | 709269S12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 345mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 12 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.015A | COMMON | Synchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | IDT71V432S6PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2014 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 83MHz | 0.18mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 6 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 7025L45PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; ARBITER; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 45 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V65602S133PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 4.2 ns | COMMON | 3V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 71V3577S85BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 180mA | 87MHz | RAM, SDR, SRAM | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流线型结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 87MHz | 30 | 180mA | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | IDT71V65603S100PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.27mA | 256KX36 | 3-STATE | 36 | 0.06A | 9437184 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 71T75802S150BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | RAM, SRAM | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | INDUSTRIAL | Parallel | 1 | 0.235mA | 3-STATE | 20b | 18 Mb | 0.06A | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 7134LA25JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 260mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V321S55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 115mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | IDT71V3556S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 70V9159L9PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 2 | 66.7MHz | 8KX9 | 3-STATE | 26b | 72 kb | 0.003A | 9 ns | COMMON | 3V | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71V25761YSA183BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 183MHz | 20 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.34mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.3 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | IDT70824S20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 80 | RAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | S-PQFP-G80 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.38mA | 4KX16 | 16 | 0.015A | 65536 bit | 20 ns | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant |
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7016L25PF
Integrated Device Technology (IDT)
分类:Memory
-
70T3399S200BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V3558S166PFGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71016S20PHI8
Integrated Device Technology (IDT)
分类:Memory
-
71V65703S75BQ8
Integrated Device Technology (IDT)
分类:Memory
-
70V26L55J8
Integrated Device Technology (IDT)
分类:Memory
-
7005S20PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V657S10DR
Integrated Device Technology (IDT)
分类:Memory
-
7142LA25JI
Integrated Device Technology (IDT)
分类:Memory
-
7054L25PRFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA20TYG8
Integrated Device Technology (IDT)
分类:Memory
-
70V261S25PF8
Integrated Device Technology (IDT)
分类:Memory
-
709269S12PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V432S6PFI
Integrated Device Technology (IDT)
分类:Memory
-
7025L45PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65602S133PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S85BGG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65603S100PFI
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S150BGGI
Integrated Device Technology (IDT)
分类:Memory
-
7134LA25JI
Integrated Device Technology (IDT)
分类:Memory
-
71V321S55J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S133PFI
Integrated Device Technology (IDT)
分类:Memory
-
70V9159L9PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761YSA183BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT70824S20PF8
Integrated Device Technology (IDT)
分类:Memory