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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70T651S15BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 305mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | COMMERCIAL | Parallel | 1.1MB | 2 | 15 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 70V658S12BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 465mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | COMMERCIAL | Parallel | 256kB | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 70V9199L7PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LQFP | YES | 100 | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 2 | 83MHz | 3-STATE | 34b | 1.1 Mb | 18 ns | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 7026L15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 285mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 15 ns | 14b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | 7005S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 265mA | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V424S15YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | 160mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 70V38L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 235mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 128kB | 2 | 15 ns | 64KX18 | 3-STATE | 32b | 1.1 Mb | 0.003A | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V67603S150PF | Integrated Device Technology (IDT) | 数据表 | 12 In Stock | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.305mA | 256KX36 | 3-STATE | 36 | 0.05A | 9437184 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 71V3557S85BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 225mA | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 91MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71421SA35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 360.605934mg | 165mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 5V | 80mA | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
 | 70V9089S15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 220mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 28.5MHz | 20 | COMMERCIAL | Parallel | 2 | 30 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.005A | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 7016S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V07L35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 120mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 不合格 | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 3-STATE | 30b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V25761SA166BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 166MHz | 20 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.32mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 71T75602S133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 195mA | RAM, SRAM | Tape & Reel | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 133MHz | COMMERCIAL | Parallel | 1 | 4.2 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70V3389S4PRF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 460mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 133MHz | COMMERCIAL | Parallel | 2 | 4.2 ns | 64KX18 | 3-STATE | 32b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 71T75802S133BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | RAM, SRAM | Tape & Reel | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 133MHz | COMMERCIAL | Parallel | 1 | 3-STATE | 20b | 18 Mb | 0.04A | 4.2 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71V65603S150BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 325mA | RAM, SRAM | Tape & Reel | 2007 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | COMMERCIAL | Parallel | 1 | 3.8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71V67603S166PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 166MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 哑光锡 | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 340mA | INDUSTRIAL | Parallel | 1.1MB | 1 | 3.5 ns | 256KX36 | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 1.4mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 70V3389S4BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 20 | COMMERCIAL | Parallel | 2 | 4.2 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 7007L35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 255mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 3-STATE | 30b | 256 kb | 0.005A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V25761YSA166BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 166MHz | 20 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.33mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | IDT71V632S8PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | 卷带 | 2012 | 70°C | 0°C | 3.3V | Parallel | 1 | 8 ns | 16b | 2 Mb | Synchronous | 32b | 3.63V | 3.135V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V25761YS200PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.1 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 70V3389S4BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 20 | COMMERCIAL | Parallel | 128kB | 2 | 4.2 ns | 64KX18 | 3-STATE | 32b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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70T651S15BF
Integrated Device Technology (IDT)
分类:Memory
-
70V658S12BC
Integrated Device Technology (IDT)
分类:Memory
-
70V9199L7PFG8
Integrated Device Technology (IDT)
分类:Memory
-
7026L15J8
Integrated Device Technology (IDT)
分类:Memory
-
7005S25PF
Integrated Device Technology (IDT)
分类:Memory
-
71V424S15YGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V38L15PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V67603S150PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S85BG8
Integrated Device Technology (IDT)
分类:Memory
-
71421SA35PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V9089S15PF8
Integrated Device Technology (IDT)
分类:Memory
-
7016S15J
Integrated Device Technology (IDT)
分类:Memory
-
70V07L35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761SA166BQ
Integrated Device Technology (IDT)
分类:Memory
-
71T75602S133BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3389S4PRF8
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S133BGG8
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S150BGG8
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S166PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3389S4BF8
Integrated Device Technology (IDT)
分类:Memory
-
7007L35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761YSA166BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V632S8PFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V25761YS200PF
Integrated Device Technology (IDT)
分类:Memory
-
70V3389S4BF
Integrated Device Technology (IDT)
分类:Memory