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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7024L55GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 84 | 250mA | RAM, SRAM | Military grade | Bulk | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.004A | 38535Q/M;38534H;883B | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
| 7133LA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 280mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7132SA35C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 165mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 7130SA35CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 230mA | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 7007L35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 255mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 3-STATE | 30b | 256 kb | 0.006A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7024S70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 0.3mA | 4KX16 | 3-STATE | 24b | 64 kb | 0.03A | 38535Q/M;38534H;883B | 70 ns | COMMON | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7164L70DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | 28 | SDR | Bulk | 2009 | 活跃 | 125°C | -55°C | 5V | Parallel | 8kB | 1 | 70 ns | 13b | 64 kb | 5.5V | 4.5V | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
| 7008S55G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 270mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | 锡铅 | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 55 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7006S25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 265mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 7007L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 255mA | RAM, SDR, SRAM | 2010 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 35 ns | 30b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 7024S35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 250mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 70V27L15BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 144 | 225mA | RAM, SRAM | 2012 | Discontinued | 70°C | 0°C | 3.3V | Parallel | 2 | 15 ns | 30b | 512 kb | Asynchronous | 16b | 3.6V | 3V | 12mm | 12mm | 1.4mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||
| 70V3599S133BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 480mA | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 85°C | -40°C | 3.3V | 133MHz | Parallel | 512kB | 2 | 4.2 ns | 34b | 4.5 Mb | Synchronous | 36b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
| 7132SA100CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 190mA | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 125°C | -55°C | 5V | Parallel | 2kB | 2 | 100 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 71V016SA15BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3.6V | 3.15V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7006L45FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 68 | RAM, SDR, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | 3A001.A.2.C | Tin/Lead (Sn/Pb) | 125°C | -55°C | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 1.27mm | 5V | MILITARY | Parallel | 16kB | 2 | 0.34mA | 45 ns | 16KX8 | 3-STATE | 0.004A | 131072 bit | MIL-STD-883 Class B | COMMON | 2V | 5.5V | 4.5V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7133LA90J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 90 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7132LA35CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 170mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 7164S25TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | 28 | RAM, SRAM - Asynchronous | Bulk | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 1 | 13b | 64 kb | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
| 7132SA55L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | LCC | 48 | 190mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2kB | 2 | 55 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 70V05S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 190mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 7164S20DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | NO | 28 | RAM, SRAM - Asynchronous | Military grade | Bulk | 2007 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 8KX8 | 3-STATE | 13b | 64 kb | 0.02A | MIL-STD-883 Class B | COMMON | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7028L20PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 哑光锡 | 85°C | -40°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 128kB | 2 | 20 ns | 64KX16 | 32b | 1 Mb | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
| 7143LA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 280mA | RAM, SDR, SRAM | 2013 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 20 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
| 7143SA90GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 68 | RAM, SRAM | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 22b | 32 kb | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
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7024L55GB
Integrated Device Technology (IDT)
分类:Memory
-
7133LA20J8
Integrated Device Technology (IDT)
分类:Memory
-
7132SA35C
Integrated Device Technology (IDT)
分类:Memory
-
7130SA35CB
Integrated Device Technology (IDT)
分类:Memory
-
7007L35G
Integrated Device Technology (IDT)
分类:Memory
-
7024S70GB
Integrated Device Technology (IDT)
分类:Memory
-
7164L70DB
Integrated Device Technology (IDT)
分类:Memory
-
7008S55G
Integrated Device Technology (IDT)
分类:Memory
-
7006S25G
Integrated Device Technology (IDT)
分类:Memory
-
7007L35J
Integrated Device Technology (IDT)
分类:Memory
-
7024S35G
Integrated Device Technology (IDT)
分类:Memory
-
70V27L15BF
Integrated Device Technology (IDT)
分类:Memory
-
70V3599S133BCGI
Integrated Device Technology (IDT)
分类:Memory
-
7132SA100CB
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15BFI
Integrated Device Technology (IDT)
分类:Memory
-
7006L45FB
Integrated Device Technology (IDT)
分类:Memory
-
7133LA90J8
Integrated Device Technology (IDT)
分类:Memory
-
7132LA35CB
Integrated Device Technology (IDT)
分类:Memory
-
7164S25TDB
Integrated Device Technology (IDT)
分类:Memory
-
7132SA55L48B
Integrated Device Technology (IDT)
分类:Memory
-
70V05S25J8
Integrated Device Technology (IDT)
分类:Memory
-
7164S20DB
Integrated Device Technology (IDT)
分类:Memory
-
7028L20PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7143LA20J8
Integrated Device Technology (IDT)
分类:Memory
-
7143SA90GB
Integrated Device Technology (IDT)
分类:Memory