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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7130SA35L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | LCC | 48 | 230mA | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 7140SA35CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 230mA | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 10b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 7133LA70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 280mA | RAM, SDR, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 4kB | 2 | 70 ns | 3-STATE | 22b | 32 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 71V416L10YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44 | RAM, SRAM - Asynchronous | Tape & Reel | 2012 | e3 | yes | 3 (168 Hours) | Matte Tin (Sn) | 85°C | -40°C | 3.3V | 260 | Parallel | 1 | 10 ns | 18b | 4 Mb | Asynchronous | 16b | 3.6V | 3V | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
| 7006S17J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 70V09L15PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | 100 | RAM, SRAM | Bulk | 2009 | 70°C | 0°C | 3.3V | Parallel | 128kB | 2 | 15 ns | 34b | 1 Mb | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
| 7005L55JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 5V | INDUSTRIAL | Parallel | 8kB | 2 | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.004A | COMMON | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7006L55G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 210mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7006L55FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 68 | RAM, SRAM | Military grade | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | MIL-PRF-38535 | 55 ns | COMMON | 2V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 70V3319S166BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 166MHz | 30 | COMMERCIAL | Parallel | 2 | 0.5mA | 3-STATE | 18b | 4.5 Mb | 0.03A | COMMON | 3.15V | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
| 7007S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 325mA | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 15 ns | 30b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 7052L25PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 120 | 300mA | RAM, SRAM | Tape & Reel | 2009 | 活跃 | 85°C | -40°C | 5V | Parallel | 4 | 25 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
| 7052L35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 108 | 300mA | RAM, SRAM | Bulk | 2009 | 活跃 | 125°C | -55°C | 5V | Parallel | 4 | 35 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 30.48mm | 30.48mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||
| 70T651S12BFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 395mA | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 18b | 9 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
| 7005L45J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 45 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
| 70T651S12BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 395mA | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 18b | 9 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
| 70T3599S200BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 525mA | 200MHz | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 2.5V | 200MHz | Parallel | 512kB | 2 | 3.4 ns | 34b | 4.5 Mb | Synchronous | 36b | 2.6V | 2.4V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
| 7007S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 305mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 70V26L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 140mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 25 ns | 14b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
| 71256S100TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 135mA | RAM, SRAM - Asynchronous | Bulk | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 1 | 100 ns | 15b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
| 7007L20JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 315mA | RAM, SDR, SRAM | 2008 | 活跃 | 85°C | -40°C | 5V | Parallel | 32kB | 2 | 20 ns | 30b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 70V06L15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 185mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 16KX8 | 3-STATE | 28b | 128 kb | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 70T3539MS133BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 900mA | 133MHz | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | Parallel | 2.3MB | 2 | 4.2 ns | 19b | 18 Mb | Synchronous | 36b | 2.6V | 2.4V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
| 7052L25PQFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | PQFP | 132 | 300mA | RAM, SDR, SRAM | 2009 | Discontinued | 85°C | -40°C | 5V | Parallel | 2kB | 4 | 25 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 24.13mm | 24.13mm | 3.55mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||
| 7025L35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 84 | 250mA | RAM, SDR, SRAM | Military grade | Bulk | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | PERPENDICULAR | PIN/PEG | 1 | MILITARY | Parallel | 16kB | 2 | 35 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
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7130SA35L48B
Integrated Device Technology (IDT)
分类:Memory
-
7140SA35CB
Integrated Device Technology (IDT)
分类:Memory
-
7133LA70GB
Integrated Device Technology (IDT)
分类:Memory
-
71V416L10YGI8
Integrated Device Technology (IDT)
分类:Memory
-
7006S17J8
Integrated Device Technology (IDT)
分类:Memory
-
70V09L15PFG
Integrated Device Technology (IDT)
分类:Memory
-
7005L55JI
Integrated Device Technology (IDT)
分类:Memory
-
7006L55G
Integrated Device Technology (IDT)
分类:Memory
-
7006L55FB
Integrated Device Technology (IDT)
分类:Memory
-
70V3319S166BFG8
Integrated Device Technology (IDT)
分类:Memory
-
7007S15J
Integrated Device Technology (IDT)
分类:Memory
-
7052L25PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7052L35GB
Integrated Device Technology (IDT)
分类:Memory
-
70T651S12BFGI
Integrated Device Technology (IDT)
分类:Memory
-
7005L45J
Integrated Device Technology (IDT)
分类:Memory
-
70T651S12BFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70T3599S200BCG
Integrated Device Technology (IDT)
分类:Memory
-
7007S25J
Integrated Device Technology (IDT)
分类:Memory
-
70V26L25J8
Integrated Device Technology (IDT)
分类:Memory
-
71256S100TDB
Integrated Device Technology (IDT)
分类:Memory
-
7007L20JI
Integrated Device Technology (IDT)
分类:Memory
-
70V06L15J8
Integrated Device Technology (IDT)
分类:Memory
-
70T3539MS133BCGI
Integrated Device Technology (IDT)
分类:Memory
-
7052L25PQFI
Integrated Device Technology (IDT)
分类:Memory
-
7025L35GB
Integrated Device Technology (IDT)
分类:Memory