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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70T633S10BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 208 | 405mA | RAM, SRAM | Tape & Reel | 2012 | e1 | yes | 3 (168 Hours) | 208 | 3A991 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 38b | 9 Mb | 0.01A | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
| 7132SA25L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LCC | 48 | 280mA | RAM, SRAM | Bulk | 2010 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 25 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 70V07S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 170mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 25 ns | 3-STATE | 30b | 256 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 7005L70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 250mA | RAM, SRAM | Bulk | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 70 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
| 7007L20JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 315mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 32kB | 2 | 20 ns | 3-STATE | 15b | 256 kb | 0.01A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 70P269L65BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | 2008 | e1 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.6V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 0.07mA | 65 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.006A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
| 7025L70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM, SRAM | Military grade | Bulk | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | PERPENDICULAR | PIN/PEG | 1 | MILITARY | Parallel | 2 | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | MIL-PRF-38535 | 70 ns | COMMON | YES | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7007L20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2010 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 20 ns | 30b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 70T3319S133BFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | RAM, SRAM | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | INDUSTRIAL | Parallel | 2 | 0.45mA | 3-STATE | 18b | 4 Mb | COMMON | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
| 70V28L20PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | COMMERCIAL | Parallel | 128kB | 2 | 20 ns | 64KX16 | 32b | 1 Mb | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
| 7016S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 265mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 18kB | 2 | 25 ns | 14b | 144 kb | Asynchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 70V9269S12PRFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | 128 | RAM, SDR, SRAM | Bulk | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 85°C | -40°C | 3.3V | 260 | Parallel | 32kB | 2 | 12 ns | 28b | 256 kb | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
| 70V9269S12PRFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | 128 | RAM, SDR, SRAM | Tape & Reel | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 85°C | -40°C | 3.3V | 260 | Parallel | 32kB | 2 | 12 ns | 14b | 256 kb | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
| 7015S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 15 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
| 7005S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 265mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7132LA35C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 120mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
| 70V07L55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 120mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 55 ns | 3-STATE | 15b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 70V06S20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7142LA55CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 140mA | RAM, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 55 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 7005L35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 250mA | RAM, SRAM | Bulk | 2005 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
| 7016L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 210mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 35 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
| 70V05S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 7005L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
| 7025L17G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | TQFP | 84 | 260mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | PERPENDICULAR | PIN/PEG | 1 | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 8KX16 | 3-STATE | 13b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7006L17J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 |
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70T633S10BFG8
Integrated Device Technology (IDT)
分类:Memory
-
7132SA25L48B
Integrated Device Technology (IDT)
分类:Memory
-
70V07S25J
Integrated Device Technology (IDT)
分类:Memory
-
7005L70GB
Integrated Device Technology (IDT)
分类:Memory
-
7007L20JI8
Integrated Device Technology (IDT)
分类:Memory
-
70P269L65BYGI
Integrated Device Technology (IDT)
分类:Memory
-
7025L70GB
Integrated Device Technology (IDT)
分类:Memory
-
7007L20J
Integrated Device Technology (IDT)
分类:Memory
-
70T3319S133BFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V28L20PFG8
Integrated Device Technology (IDT)
分类:Memory
-
7016S25J8
Integrated Device Technology (IDT)
分类:Memory
-
70V9269S12PRFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V9269S12PRFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7015S15J8
Integrated Device Technology (IDT)
分类:Memory
-
7005S25J8
Integrated Device Technology (IDT)
分类:Memory
-
7132LA35C
Integrated Device Technology (IDT)
分类:Memory
-
70V07L55J
Integrated Device Technology (IDT)
分类:Memory
-
70V06S20J
Integrated Device Technology (IDT)
分类:Memory
-
7142LA55CB
Integrated Device Technology (IDT)
分类:Memory
-
7005L35GB
Integrated Device Technology (IDT)
分类:Memory
-
7016L35J
Integrated Device Technology (IDT)
分类:Memory
-
70V05S15J
Integrated Device Technology (IDT)
分类:Memory
-
7005L15J
Integrated Device Technology (IDT)
分类:Memory
-
7025L17G
Integrated Device Technology (IDT)
分类:Memory
-
7006L17J8
Integrated Device Technology (IDT)
分类:Memory