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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V9269L12PRFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 85°C | -40°C | 3.3V | 260 | 33.3MHz | Parallel | 32kB | 2 | 12 ns | 28b | 256 kb | Synchronous | 16b | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
| 70V06L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 165mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 70V659S12BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 515mA | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | 30 | INDUSTRIAL | Parallel | 512kB | 2 | 12 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
| 7143LA25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 270mA | RAM, SDR, SRAM | 2013 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 25 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 7006L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 70T633S10BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 208 | 405mA | RAM, SRAM | Bulk | 2012 | e1 | yes | 3 (168 Hours) | 208 | 3A991 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 38b | 9 Mb | 0.01A | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
| 7143LA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 280mA | RAM, SDR, SRAM | 2013 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 20 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 70V07L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 120mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 35 ns | 3-STATE | 15b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 70T3539MS133BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 256 | 133MHz | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 70°C | 0°C | 2.5V | 133MHz | Parallel | 2.3MB | 2 | 4.2 ns | 38b | 18 Mb | 2.6V | 2.4V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||
| 7143SA70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 310mA | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 70 ns | 3-STATE | 22b | 32 kb | 0.015A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 70V26L25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 84 | RAM, SDR, SRAM | Bulk | 2009 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 25 ns | 14b | 256 kb | 3.6V | 3V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 7133LA20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 280mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 70V24L55PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn/Pb) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | INDUSTRIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 24b | 64 kb | Asynchronous | 16b | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7143SA25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 300mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 25 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
| 71256L25DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | NO | 28 | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 32kB | 1 | 25 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.0005A | MIL-STD-883 Class B | COMMON | 2V | 5.5V | 4.5V | 5.08mm | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 7133SA55JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 315mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | LOW POWER STANDBY; BATTERY BACK UP | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 4kB | 2 | 55 ns | 3-STATE | 22b | 32 kb | 0.004A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 7005S70FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 68 | RAM, SRAM | Bulk | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 0.3mA | 8KX8 | 3-STATE | 26b | 64 kb | 0.03A | 70 ns | COMMON | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 70V06S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 215mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 7007L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 265mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 15b | 256 kb | 0.005A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 70V07S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 140mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 3-STATE | 30b | 256 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7027S55G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 108 | 270mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 108 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 55 ns | 3-STATE | 15b | 512 kb | 0.005A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 30.48mm | 30.48mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 70914S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 300mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE; SELF TIMED WRITE | 5V | QUAD | J BEND | 225 | 1 | 50MHz | 5V | COMMERCIAL | Parallel | 2 | 15 ns | 4KX9 | 3-STATE | 12b | 36 kb | 0.015A | COMMON | Synchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7133LA55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 55 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7005S35JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 8kB | 2 | 0.3mA | 35 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.03A | COMMON | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 71T75602S150BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 215mA | 150MHz | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 150MHz | 215mA | COMMERCIAL | Parallel | 2.3MB | 1 | 3.8 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 |
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70V9269L12PRFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V06L25J8
Integrated Device Technology (IDT)
分类:Memory
-
70V659S12BCGI
Integrated Device Technology (IDT)
分类:Memory
-
7143LA25J8
Integrated Device Technology (IDT)
分类:Memory
-
7006L15J
Integrated Device Technology (IDT)
分类:Memory
-
70T633S10BFG
Integrated Device Technology (IDT)
分类:Memory
-
7143LA20J
Integrated Device Technology (IDT)
分类:Memory
-
70V07L35J8
Integrated Device Technology (IDT)
分类:Memory
-
70T3539MS133BCG
Integrated Device Technology (IDT)
分类:Memory
-
7143SA70GB
Integrated Device Technology (IDT)
分类:Memory
-
70V26L25G
Integrated Device Technology (IDT)
分类:Memory
-
7133LA20G
Integrated Device Technology (IDT)
分类:Memory
-
70V24L55PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7143SA25J8
Integrated Device Technology (IDT)
分类:Memory
-
71256L25DB
Integrated Device Technology (IDT)
分类:Memory
-
7133SA55JI8
Integrated Device Technology (IDT)
分类:Memory
-
7005S70FB
Integrated Device Technology (IDT)
分类:Memory
-
70V06S15J8
Integrated Device Technology (IDT)
分类:Memory
-
7007L25J8
Integrated Device Technology (IDT)
分类:Memory
-
70V07S35J
Integrated Device Technology (IDT)
分类:Memory
-
7027S55G
Integrated Device Technology (IDT)
分类:Memory
-
70914S15J8
Integrated Device Technology (IDT)
分类:Memory
-
7133LA55J
Integrated Device Technology (IDT)
分类:Memory
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7005S35JI8
Integrated Device Technology (IDT)
分类:Memory
-
71T75602S150BG
Integrated Device Technology (IDT)
分类:Memory