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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | Current - Supply (Nom) | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V016SA15BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 85°C | -40°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V05L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 175mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7016S12J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 325mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 18kB | 2 | 12 ns | 28b | 144 kb | Asynchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7005L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | 68 | RAM, SDR, SRAM | Tape & Reel | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 25 ns | 26b | 64 kb | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7130SA100JI | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 52 | 52 | -40°C | 85°C | e0 | icon-pbfree no | 3 (168 Hours) | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.41 | 5V | QUAD | J BEND | 225 | 1 | 1.27mm | not_compliant | 未说明 | S-PQCC-J52 | 不合格 | 5V | INDUSTRIAL | 2 | ASYNCHRONOUS | 0.19mA | 1KX8 | 3-STATE | 8 | 0.03A | 8192 bit | 100 ns | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5V | 5.5V | 4.5V | 4.57mm | 19.1262mm | 19.1262mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7026L35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 84 | 295mA | RAM, SDR, SRAM | Military grade | Bulk | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 32kB | 2 | 35 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.01A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7006S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 265mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 25 ns | 28b | 128 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7143LA70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 68 | RAM, SRAM | Military grade | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 3-STATE | 22b | 32 kb | 0.004A | MIL-PRF-38535 | 70 ns | COMMON | 2V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7143LA90GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 280mA | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 90 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7006L20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 240mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V658S10DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 500mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 256kB | 2 | 10 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V06S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 14b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7007S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 315mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 20 ns | 3-STATE | 15b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT7130SA55JG | Integrated Device Technology | 数据表 | 24 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 52 | 52 | QCCJ, LDCC52,.8SQ | CHIP CARRIER | 1 | 1000 | PLASTIC/EPOXY | LDCC52,.8SQ | 20 | 55 ns | 70 °C | 有 | IDT7130SA55JG | 1024 words | 5 V | QCCJ | SQUARE | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.06 | LCC | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | compliant | S-PQCC-J52 | 不合格 | 5 V | COMMERCIAL | 2 | ASYNCHRONOUS | 0.155 mA | 1KX8 | 3-STATE | 4.572 mm | 8 | 0.015 A | 8192 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 4.5 V | 5.5 V | 4.5 V | 19.1262 mm | 19.1262 mm | |||||||||||||||||||||||||||||||||||||||||||
| IDT71V016SA12YG | Integrated Device Technology | 数据表 | 393 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | 44 | SOJ, SOJ44,.44 | 小概要 | 3 | 64000 | PLASTIC/EPOXY | SOJ44,.44 | 30 | 12 ns | 70 °C | 有 | IDT71V016SA12YG | 65536 words | 3.3 V | SOJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.28 | SOJ | e3 | 有 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 8542.32.00.41 | SRAMs | CMOS | DUAL | J BEND | 260 | 1 | 1.27 mm | compliant | R-PDSO-J44 | 不合格 | 3.3 V | COMMERCIAL | 1 | ASYNCHRONOUS | 0.16 mA | 64KX16 | 3-STATE | 3.683 mm | 16 | 0.01 A | 1048576 bit | PARALLEL | COMMON | 标准SRAM | 3 V | 3.6 V | 3 V | YES | 28.575 mm | 10.16 mm | ||||||||||||||||||||||||||||||||||||||||||
| IDT71321LA20PFG | Integrated Device Technology | 数据表 | 390 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | 64 | LQFP, QFP64,.66SQ,32 | FLATPACK, LOW PROFILE | 3 | 2000 | PLASTIC/EPOXY | QFP64,.66SQ,32 | 30 | 20 ns | 70 °C | 有 | IDT71321LA20PFG | 2048 words | 5 V | LQFP | SQUARE | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.18 | QFP | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 自动断电 | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.8 mm | compliant | S-PQFP-G64 | 不合格 | 5 V | COMMERCIAL | 2 | ASYNCHRONOUS | 0.2 mA | 2KX8 | 3-STATE | 1.6 mm | 8 | 0.0015 A | 16384 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | 5.5 V | 4.5 V | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||
| IDT70P3537S233RMI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | FCBGA | QDR, RAM, SRAM | 2006 | 85°C | -40°C | 233MHz | Parallel | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT70P3537S233RM | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | FCBGA | QDR, RAM, SRAM | 2006 | 70°C | 0°C | 233MHz | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT70P3517S250RM | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | FCBGA | QDR, RAM, SRAM | 2006 | 70°C | 0°C | 250MHz | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V2546XS150PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | RAM, SRAM | Tape & Reel (TR) | 70°C | 0°C | 150MHz | Parallel | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7024L35PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 64Kb (4K x 16) | 35ns | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7024S20PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 64Kb (4K x 16) | 20ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7024S17PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 64Kb (4K x 16) | 17ns | SRAM | Parallel | 17ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7130SA55PFI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 64-LQFP | 64-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tape & Reel (TR) | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 8Kb (1K x 8) | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V27S25PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 3 V ~ 3.6 V | 512Kb (32K x 16) | 25ns | SRAM | Parallel | 25ns |
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71V016SA15BFI8
Integrated Device Technology (IDT)
分类:Memory
-
70V05L20J8
Integrated Device Technology (IDT)
分类:Memory
-
7016S12J
Integrated Device Technology (IDT)
分类:Memory
-
7005L25J8
Integrated Device Technology (IDT)
分类:Memory
-
7130SA100JI
Integrated Device Technology Inc
分类:Memory
-
7026L35GB
Integrated Device Technology (IDT)
分类:Memory
-
7006S25J
Integrated Device Technology (IDT)
分类:Memory
-
7143LA70GB
Integrated Device Technology (IDT)
分类:Memory
-
7143LA90GB
Integrated Device Technology (IDT)
分类:Memory
-
7006L20G
Integrated Device Technology (IDT)
分类:Memory
-
70V658S10DR
Integrated Device Technology (IDT)
分类:Memory
-
70V06S20J8
Integrated Device Technology (IDT)
分类:Memory
-
7007S20J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT7130SA55JG
Integrated Device Technology
分类:Memory
-
IDT71V016SA12YG
Integrated Device Technology
分类:Memory
-
IDT71321LA20PFG
Integrated Device Technology
分类:Memory
-
IDT70P3537S233RMI
Integrated Device Technology (IDT)
分类:Memory
-
IDT70P3537S233RM
Integrated Device Technology (IDT)
分类:Memory
-
IDT70P3517S250RM
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V2546XS150PF8
Integrated Device Technology (IDT)
分类:Memory
-
7024L35PFI
Integrated Device Technology
分类:Memory
-
7024S20PFI
Integrated Device Technology
分类:Memory
-
7024S17PFI
Integrated Device Technology
分类:Memory
-
7130SA55PFI8
Integrated Device Technology
分类:Memory
-
70V27S25PFI
Integrated Device Technology
分类:Memory