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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71256S55TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | NO | 28 | RAM, SDR, SRAM - Asynchronous | Military grade | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 32kB | 1 | 55 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.02A | MIL-STD-883 Class B | COMMON | 5.5V | 4.5V | 5.08mm | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V016SA12YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.16mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 12 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||
| 70V26S55G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 140mA | RAM, SRAM | 2009 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 2 | 55 ns | 14b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7164L45DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | NO | 28 | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn63Pb37) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 8kB | 1 | 45 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.0002A | MIL-STD-883 Class B | COMMON | 2V | 5.5V | 4.5V | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| IDT71V3577SA80BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2005 | e1 | 119 | 3A991.B.2.A | 锡银铜 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1.27mm | unknown | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 8 ns | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||
| 71256L55TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | 28 | RAM, SRAM - Asynchronous | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 1 | 15b | 256 kb | 37.72mm | 7.62mm | 3.56mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
| 7006S55GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 300mA | RAM, SDR, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | MILITARY | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.03A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7015L12J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2010 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 9kB | 2 | 12 ns | 26b | 72 kb | Asynchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
| IDT71T016SA15BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.015A | 15 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | ||||||||||||||||||||||||
| 71V016SA15BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
| 70V3569S4BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SRAM | Tape & Reel | 2008 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | COMMERCIAL | Parallel | 2 | 4.2 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.015A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
| IDT71T016SA15BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | INDUSTRIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.015A | 15 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | |||||||||||||||||||||||||
| IDT71T016SA12BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.15mA | 64KX16 | 3-STATE | 16 | 0.015A | 12 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | ||||||||||||||||||||||||
| 70V26L35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 120mA | RAM, SRAM | 2009 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 2 | 35 ns | 28b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7007S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 295mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 7130SA100L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LCC | 48 | 190mA | RAM, SDR, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | QUAD | 240 | 1 | 1.016mm | 5V | MILITARY | Parallel | 1kB | 2 | 100 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.03A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7006S20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 290mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 71V3577S85BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | FBGA | 165 | 190mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 87MHz | 20 | INDUSTRIAL | Parallel | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7140LA55L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | BQFN | 48 | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 20b | 8 kb | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
| 7133LA45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 45 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 7005S45J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; ARBITER; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 0.34mA | 45 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7005S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7006S25GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 340mA | RAM, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | MILITARY | Parallel | 2 | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.03A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7132SA55C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 155mA | RAM, SRAM | Bulk | 2007 | e0 | no | 活跃 | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | DUAL | 240 | 1 | 5V | COMMERCIAL | Parallel | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V256S10YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 28 | RAM, SRAM - Asynchronous | 70°C | 0°C | 3.3V | Parallel | 1 | 15b | 256 kb | 无 | 符合RoHS标准 |
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71256S55TDB
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA12YI8
Integrated Device Technology (IDT)
分类:Memory
-
70V26S55G
Integrated Device Technology (IDT)
分类:Memory
-
7164L45DB
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA80BGG
Integrated Device Technology (IDT)
分类:Memory
-
71256L55TDB
Integrated Device Technology (IDT)
分类:Memory
-
7006S55GB
Integrated Device Technology (IDT)
分类:Memory
-
7015L12J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA15BF8
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15BFG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S4BFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA15BFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA12BF8
Integrated Device Technology (IDT)
分类:Memory
-
70V26L35G
Integrated Device Technology (IDT)
分类:Memory
-
7007S35J
Integrated Device Technology (IDT)
分类:Memory
-
7130SA100L48B
Integrated Device Technology (IDT)
分类:Memory
-
7006S20J
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S85BQI
Integrated Device Technology (IDT)
分类:Memory
-
7140LA55L48B
Integrated Device Technology (IDT)
分类:Memory
-
7133LA45J8
Integrated Device Technology (IDT)
分类:Memory
-
7005S45J
Integrated Device Technology (IDT)
分类:Memory
-
7005S35J8
Integrated Device Technology (IDT)
分类:Memory
-
7006S25GB
Integrated Device Technology (IDT)
分类:Memory
-
7132SA55C
Integrated Device Technology (IDT)
分类:Memory
-
71V256S10YG
Integrated Device Technology (IDT)
分类:Memory