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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7143LA20JG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 68 | EAR99 | Matte Tin (Sn) | 70°C | 0°C | 5V | QUAD | 260 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
| 7025L55FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 84 | 250mA | RAM, SDR, SRAM | Military grade | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | FLAT | 1 | MILITARY | Parallel | 16kB | 2 | 55 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 29.2mm | 29.21mm | 2.54mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7006S25GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 340mA | RAM, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | MILITARY | Parallel | 2 | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.03A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 7132SA55C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 155mA | RAM, SRAM | Bulk | 2007 | e0 | no | 活跃 | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | DUAL | 240 | 1 | 5V | COMMERCIAL | Parallel | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7142LA35PDG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | DIP | NO | 48 | RAM, SRAM | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 48 | EAR99 | Matte Tin (Sn) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 260 | 1 | 未说明 | COMMERCIAL | Parallel | ASYNCHRONOUS | 2KX8 | 16384 bit | 35 ns | 5.5V | 4.5V | 61.7mm | 15.24mm | 3.8mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
| 7015L17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 17 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7005L17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 17 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 7015S17J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 17 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 70V05S55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 0.18mA | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7005L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 210mA | RAM, SDR, SRAM | Tape & Reel | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 35 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
| 7005S17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 17 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| IDT71T016SA20BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.015A | 20 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
| IDT71T016SA20BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | INDUSTRIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.015A | 20 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
| 7132LA55CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 140mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2kB | 2 | 55 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
| 70914S25PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 80 | RAM, SRAM | Bulk | e3 | yes | 3 (168 Hours) | 80 | EAR99 | 哑光锡 | 85°C | -40°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 30 | INDUSTRIAL | Parallel | 2 | 4KX9 | 9 | 24b | 36 kb | 1.6mm | 14mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
| IDT71T016SA20BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.015A | 20 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | |||||||||||||||||||||||||
| 7016S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 265mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 25 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7143SA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2013 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 20 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
| 70V06S55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 180mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7142LA100CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 140mA | RAM, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 100 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7015L12J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2010 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 9kB | 2 | 12 ns | 26b | 72 kb | Asynchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
| 71V016SA15BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
| IDT71T016SA12BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 48 | 3A991.B.2.B | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 2.5V | BOTTOM | BALL | 225 | 1 | 0.75mm | not_compliant | 20 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.15mA | 64KX16 | 3-STATE | 16 | 0.015A | 12 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.34mm | 7mm | 7mm | Non-RoHS Compliant | |||||||||||||||||||||||||
| 7142LA100C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 110mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 100 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
| 70V3569S4BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SRAM | Tape & Reel | 2008 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | COMMERCIAL | Parallel | 2 | 4.2 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.015A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 |
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7143LA20JG8
Integrated Device Technology (IDT)
分类:Memory
-
7025L55FB
Integrated Device Technology (IDT)
分类:Memory
-
7006S25GB
Integrated Device Technology (IDT)
分类:Memory
-
7132SA55C
Integrated Device Technology (IDT)
分类:Memory
-
7142LA35PDG
Integrated Device Technology (IDT)
分类:Memory
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7015L17J
Integrated Device Technology (IDT)
分类:Memory
-
7005L17J
Integrated Device Technology (IDT)
分类:Memory
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7015S17J8
Integrated Device Technology (IDT)
分类:Memory
-
70V05S55J8
Integrated Device Technology (IDT)
分类:Memory
-
7005L35J8
Integrated Device Technology (IDT)
分类:Memory
-
7005S17J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA20BF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA20BFI
Integrated Device Technology (IDT)
分类:Memory
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7132LA55CB
Integrated Device Technology (IDT)
分类:Memory
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70914S25PFGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA20BF8
Integrated Device Technology (IDT)
分类:Memory
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7016S25J
Integrated Device Technology (IDT)
分类:Memory
-
7143SA20J
Integrated Device Technology (IDT)
分类:Memory
-
70V06S55J
Integrated Device Technology (IDT)
分类:Memory
-
7142LA100CB
Integrated Device Technology (IDT)
分类:Memory
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7015L12J8
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15BFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T016SA12BF8
Integrated Device Technology (IDT)
分类:Memory
-
7142LA100C
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S4BFG8
Integrated Device Technology (IDT)
分类:Memory