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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 资历状况 | 螺纹距离 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7015S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 35 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 70P245L65BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2011 | e1 | yes | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 0.07mA | 65 ns | 4KX16 | 3-STATE | 16 | 24b | 64 kb | 0.000008A | COMMON | 3V | 1.8V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||
| 7015S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 265mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 25 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7006S17G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 310mA | RAM, SDR, SRAM | Bulk | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 17 ns | 28b | 128 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 70P269L90BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e1 | yes | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 0.06mA | 90 ns | 16KX16 | 3-STATE | 16 | 28b | 256 kb | 0.006A | COMMON | 3V | 1.8V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||
| 7006S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 70P254L55BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | TFBGA | YES | 81 | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 81 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 16kB | 2 | 55 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.000006A | COMMON | 1.9V | 1.7V | 5mm | 5mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
| 70P269L90BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2008 | e1 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.6V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 0.06mA | 90 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.006A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
| 7142LA35CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 170mA | RAM, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7016L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 20 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT7164L35Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.13mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 35 ns | COMMON | 2V | 5.5V | 4.5V | YES | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||
| 70P259L90BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2008 | e1 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.6V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 16kB | 2 | 0.06mA | 90 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.006A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
| 7024S20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 290mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 12b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 70P255L90BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2011 | e1 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 16kB | 2 | 0.06mA | 90 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.000008A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
| 70V05S20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 200mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 70V7519S200BCG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | YES | 256 | 200MHz | RAM, SDR, SRAM | Tape & Reel | 2013 | e1 | yes | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线或流过式结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 200MHz | 1mm | COMMERCIAL | Parallel | 1.1MB | 2 | 15 ns | 36b | 9 Mb | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||
| 70P244L40BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | 81 | RAM, SDR, SRAM | Bulk | 2009 | Discontinued | 85°C | -40°C | 1.8V | Parallel | 8kB | 2 | 40 ns | 24b | 64 kb | 1.9V | 1.7V | 5mm | 5mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| 70T3319S166BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | RAM, SRAM | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 166MHz | 30 | COMMERCIAL | Parallel | 2 | 0.45mA | 3-STATE | 18b | 4 Mb | 0.015A | 3.6 ns | COMMON | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
| 70P249L65BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2008 | e1 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.6V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 0.07mA | 65 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.000006A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
| 70P249L90BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2008 | e1 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.6V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 0.06mA | 90 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.000006A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
| 71V016SA15BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
| 7130LA100C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 110mA | RAM, SRAM | Bulk | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 2 | 100 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 70914S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | PLCC | 68 | 290mA | RAM, SRAM | 2010 | 活跃 | 70°C | 0°C | 5V | 40MHz | Parallel | 2 | 25 ns | 24b | 36 kb | Synchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| IDT70824L25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.31mA | 4KX16 | 16 | 5A | 65536 bit | 25 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
| IDT70825L20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.33mA | 8KX16 | 16 | 0.0015A | 131072 bit | 20 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant |
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7015S35J8
Integrated Device Technology (IDT)
分类:Memory
-
70P245L65BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
7015S25PF
Integrated Device Technology (IDT)
分类:Memory
-
7006S17G
Integrated Device Technology (IDT)
分类:Memory
-
70P269L90BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
7006S35J8
Integrated Device Technology (IDT)
分类:Memory
-
70P254L55BYGI
Integrated Device Technology (IDT)
分类:Memory
-
70P269L90BYGI
Integrated Device Technology (IDT)
分类:Memory
-
7142LA35CB
Integrated Device Technology (IDT)
分类:Memory
-
7016L20J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164L35Y
Integrated Device Technology (IDT)
分类:Memory
-
70P259L90BYGI
Integrated Device Technology (IDT)
分类:Memory
-
7024S20G
Integrated Device Technology (IDT)
分类:Memory
-
70P255L90BYGI
Integrated Device Technology (IDT)
分类:Memory
-
70V05S20J
Integrated Device Technology (IDT)
分类:Memory
-
70V7519S200BCG8
Integrated Device Technology (IDT)
分类:Memory
-
70P244L40BYGI
Integrated Device Technology (IDT)
分类:Memory
-
70T3319S166BFG
Integrated Device Technology (IDT)
分类:Memory
-
70P249L65BYGI
Integrated Device Technology (IDT)
分类:Memory
-
70P249L90BYGI
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15BFG
Integrated Device Technology (IDT)
分类:Memory
-
7130LA100C
Integrated Device Technology (IDT)
分类:Memory
-
70914S25J
Integrated Device Technology (IDT)
分类:Memory
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IDT70824L25G
Integrated Device Technology (IDT)
分类:Memory
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IDT70825L20G
Integrated Device Technology (IDT)
分类:Memory