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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7052L20PQF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | PQFP | 132 | 250mA | RAM, SRAM | 2009 | Discontinued | 70°C | 0°C | 5V | Parallel | 4 | 20 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 24.13mm | 24.13mm | 3.55mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||
| 70V07L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 140mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 30b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
| IDT71V3557SA85BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | Tape & Reel (TR) | 2009 | e1 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 90MHz | 0.225mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||
 | IDT71V432S8PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | e3 | 100 | 哑光锡 | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 未说明 | 1 | 0.65mm | 未说明 | 不合格 | COMMERCIAL | Parallel | 1 | 8 ns | 32KX32 | 3-STATE | 32 | 15b | 1 Mb | Synchronous | 32b | 3.63V | 3.135V | YES | 20mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
| 70V3569S4BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SDR, SRAM | 2008 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | COMMERCIAL | Parallel | 72kB | 2 | 7.5 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.015A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
| IDT70824S20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.38mA | 4KX16 | 16 | 15A | 65536 bit | 20 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
| 7007L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2010 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 20 ns | 15b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
| 7016L12J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 12 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7016L12J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 275mA | RAM, SDR, SRAM | 2009 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 18kB | 2 | 12 ns | 14b | 144 kb | Asynchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 7016L20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 20 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V67703S80PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.21mA | 256KX36 | 3-STATE | 36 | 0.05A | 9437184 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
| 7006L35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 250mA | RAM, SDR, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | MILITARY | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7005L20JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 320mA | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 85°C | -40°C | 5V | Parallel | 8kB | 2 | 20 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7008S35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 295mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | 锡铅 | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 35 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
| 7005S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7007S20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 315mA | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 20 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
| 7016L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7134SA55L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LCC | 48 | 270mA | RAM, SRAM | Military grade | Bulk | 1999 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN | 5V | QUAD | 240 | 1 | 1mm | 5V | MILITARY | Parallel | 2 | 55 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.03A | 38535Q/M;38534H;883B | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7025S25GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 84 | 340mA | RAM, SRAM | Bulk | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 25 ns | 26b | 128 kb | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
| IDT70824L35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.29mA | 4KX16 | 16 | 5A | 65536 bit | 35 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
| 7132LA100CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 140mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2kB | 2 | 100 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| IDT71V3577YS80PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2006 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 100MHz | 0.21mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
| 7130LA25L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LCC | 48 | 220mA | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | QUAD | 240 | 1 | 1.016mm | 5V | MILITARY | Parallel | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7133SA90GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 310mA | RAM, SDR, SRAM | Military grade | Bulk | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 4kB | 2 | 90 ns | 3-STATE | 22b | 32 kb | 0.015A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7016L20JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 2 | 20 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 |
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7052L20PQF
Integrated Device Technology (IDT)
分类:Memory
-
70V07L25J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3557SA85BGG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V432S8PFG
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S4BFG
Integrated Device Technology (IDT)
分类:Memory
-
IDT70824S20G
Integrated Device Technology (IDT)
分类:Memory
-
7007L20J8
Integrated Device Technology (IDT)
分类:Memory
-
7016L12J
Integrated Device Technology (IDT)
分类:Memory
-
7016L12J8
Integrated Device Technology (IDT)
分类:Memory
-
7016L20J
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V67703S80PF
Integrated Device Technology (IDT)
分类:Memory
-
7006L35GB
Integrated Device Technology (IDT)
分类:Memory
-
7005L20JI8
Integrated Device Technology (IDT)
分类:Memory
-
7008S35G
Integrated Device Technology (IDT)
分类:Memory
-
7005S15J
Integrated Device Technology (IDT)
分类:Memory
-
7007S20G
Integrated Device Technology (IDT)
分类:Memory
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7016L15J
Integrated Device Technology (IDT)
分类:Memory
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7134SA55L48B
Integrated Device Technology (IDT)
分类:Memory
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7025S25GB
Integrated Device Technology (IDT)
分类:Memory
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IDT70824L35G
Integrated Device Technology (IDT)
分类:Memory
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7132LA100CB
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577YS80PFI
Integrated Device Technology (IDT)
分类:Memory
-
7130LA25L48B
Integrated Device Technology (IDT)
分类:Memory
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7133SA90GB
Integrated Device Technology (IDT)
分类:Memory
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7016L20JI8
Integrated Device Technology (IDT)
分类:Memory