我的订单
会员中心 
在线咨询
0755-83328606
品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V3557S75BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 275mA | 100MHz | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 7.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||
 | 7006L55PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | INDUSTRIAL | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||
 | 70T651S10BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 405mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 7130SA100PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 155mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 100 ns | 1KX8 | 3-STATE | 10b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||
 | 70V631S12BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 515mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | INDUSTRIAL | Parallel | 512kB | 2 | 12 ns | 3-STATE | 18b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 70V3579S6DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 310mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 83MHz | COMMERCIAL | Parallel | 128kB | 2 | 12 ns | 3-STATE | 15b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V321S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 130mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池操作 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||
 | 7133LA25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 270mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 71342SA25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 280mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||
 | 71V65903S85BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | 119 | RAM, SRAM | 2005 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 1 | 19b | 9 Mb | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||
 | 70V3379S4BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 460mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 2 | 4.2 ns | 3-STATE | 30b | 576 kb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V2556SA100BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 260mA | 100MHz | RAM, SDR, SRAM | 2011 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 7038L15PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 340mA | RAM, SDR, SRAM | Bulk | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | COMMERCIAL | Parallel | 128kB | 2 | 15 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.003A | COMMON | Asynchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||
 | 70V35L15PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 185mA | RAM, SDR, SRAM | Bulk | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 8KX18 | 3-STATE | 26b | 144 kb | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||
 | 71V2546S133PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 300mA | 133MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||
 | 70T659S10BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 445mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 10 ns | 3-STATE | 34b | 4.5 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 70261L20PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 315mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 260 | 1 | INDUSTRIAL | Parallel | 32kB | 2 | 20 ns | 16KX16 | 28b | 256 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||
 | 70V9289L12PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 200mA | 83MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 33.3MHz | COMMERCIAL | Parallel | 128kB | 2 | 12 ns | 64KX16 | 3-STATE | 32b | 1 Mb | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 7130LA20PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 200mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 20 ns | 10b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71V432S5PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 200mA | 100MHz | RAM, SDR, SRAM | 2013 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 128kB | 1 | 5 ns | 32KX32 | 3-STATE | 15b | 1 Mb | COMMON | Synchronous | 32b | 3.63V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||
 | 70T3599S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | Tape & Reel | 2009 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | Parallel | 2 | 15 ns | 34b | 4.5 Mb | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 71V546S100PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | Tape & Reel | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||
 | 7052S25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 108 | 300mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 108 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4 | 25 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.207mm | 30.48mm | 30.48mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 7027S25PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 345mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | INDUSTRIAL | Parallel | 64kB | 2 | 25 ns | 3-STATE | 30b | 512 kb | 0.03A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 70V24L15PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | INDUSTRIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 24b | 64 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 |
-
71V3557S75BG8
Integrated Device Technology (IDT)
分类:Memory
-
7006L55PFI
Integrated Device Technology (IDT)
分类:Memory
-
70T651S10BF8
Integrated Device Technology (IDT)
分类:Memory
-
7130SA100PF
Integrated Device Technology (IDT)
分类:Memory
-
70V631S12BCI
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S6DR
Integrated Device Technology (IDT)
分类:Memory
-
71V321S25PF
Integrated Device Technology (IDT)
分类:Memory
-
7133LA25J
Integrated Device Technology (IDT)
分类:Memory
-
71342SA25PF
Integrated Device Technology (IDT)
分类:Memory
-
71V65903S85BGG
Integrated Device Technology (IDT)
分类:Memory
-
70V3379S4BC
Integrated Device Technology (IDT)
分类:Memory
-
71V2556SA100BGI
Integrated Device Technology (IDT)
分类:Memory
-
7038L15PFG
Integrated Device Technology (IDT)
分类:Memory
-
70V35L15PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V2546S133PFG
Integrated Device Technology (IDT)
分类:Memory
-
70T659S10BCI
Integrated Device Technology (IDT)
分类:Memory
-
70261L20PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V9289L12PRF
Integrated Device Technology (IDT)
分类:Memory
-
7130LA20PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71V432S5PFG
Integrated Device Technology (IDT)
分类:Memory
-
70T3599S133BFI8
Integrated Device Technology (IDT)
分类:Memory
-
71V546S100PFG8
Integrated Device Technology (IDT)
分类:Memory
-
7052S25G
Integrated Device Technology (IDT)
分类:Memory
-
7027S25PFI
Integrated Device Technology (IDT)
分类:Memory
-
70V24L15PFGI
Integrated Device Technology (IDT)
分类:Memory