N/A

-

8 Weeks

TQFP

YES

100

166MHz

RAM, SDR, SRAM

2012

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

85°C

-40°C

流水线结构

2.5V

QUAD

鸥翼

260

1

0.65mm

166MHz

30

INDUSTRIAL

Parallel

2.3MB

1

0.265mA

3.5 ns

3-STATE

20b

18 Mb

0.06A

COMMON

2.38V

2.625V

2.375V

20mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

11 Weeks

YES

165

100MHz

RAM, SDR, SRAM

2006

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

3.3V

BOTTOM

BALL

260

1

100MHz

30

INDUSTRIAL

Parallel

512kB

1

0.255mA

5 ns

3-STATE

18b

4.5 Mb

0.045A

COMMON

3.465V

3.135V

15mm

13mm

1.2mm

无

符合RoHS标准

无铅

N/A

-

8 Weeks

BGA

YES

119

RAM, SRAM

2012

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

260

1

133MHz

30

INDUSTRIAL

Parallel

1

3-STATE

20b

18 Mb

0.06A

4.2 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

TQFP

100

300mA

133MHz

RAM, SDR, SRAM

2006

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

QUAD

鸥翼

260

1

0.65mm

133MHz

30

COMMERCIAL

Parallel

512kB

1

4.2 ns

3-STATE

17b

4.5 Mb

0.04A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

8 Weeks

表面贴装

TQFP

100

260mA

133MHz

RAM, SDR, SRAM

2009

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

流水线结构

3.3V

QUAD

鸥翼

260

1

0.65mm

133MHz

30

COMMERCIAL

Parallel

1.1MB

1

4.2 ns

256KX36

3-STATE

18b

9 Mb

0.05A

COMMON

Synchronous

36b

3.465V

3.135V

20mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

12 Weeks

表面贴装

TQFP

100

250mA

100MHz

RAM, SDR, SRAM

2006

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

QUAD

鸥翼

260

1

0.65mm

100MHz

30

COMMERCIAL

Parallel

512kB

1

5 ns

3-STATE

18b

4.5 Mb

0.04A

COMMON

Synchronous

18b

3.465V

3.135V

20mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

BGA

119

150MHz

RAM, SDR, SRAM

2015

e0

no

活跃

3 (168 Hours)

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

225

150MHz

Parallel

512kB

1

17b

4.5 Mb

3.465V

3.135V

2.15mm

14mm

22mm

2.15mm

无

符合RoHS标准

含铅

N/A

-

7 Weeks

表面贴装

TQFP

64

155mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

1kB

2

55 ns

1KX8

3-STATE

20b

8 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

含铅

N/A

-

7 Weeks

表面贴装

32

145mA

RAM, SDR, SRAM - Asynchronous

Tape & Reel

2013

e3

yes

活跃

3 (168 Hours)

32

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

DUAL

J BEND

260

1

COMMERCIAL

Parallel

128kB

1

10 ns

3-STATE

17b

1 Mb

COMMON

Asynchronous

8b

3.6V

3.15V

3.683mm

20.9mm

10.2mm

2.2mm

无

符合RoHS标准

无铅

N/A

-

表面贴装

TQFP

80

360mA

RAM

2009

e0

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

不合格

5V

COMMERCIAL

Parallel

2

25 ns

8KX16

16

26b

128 kb

0.015A

Asynchronous

16b

5.5V

4.5V

1.6mm

14mm

Non-RoHS Compliant

N/A

-

7 Weeks

表面贴装

165

230mA

100MHz

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

165

Tin/Lead (Sn63Pb37)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

3.3V

BOTTOM

BALL

225

1

100MHz

20

INDUSTRIAL

Parallel

1.1MB

1

8 ns

256KX36

3-STATE

18b

9 Mb

0.07A

COMMON

Synchronous

36b

3.465V

3.135V

15mm

13mm

1.2mm

无

符合RoHS标准

含铅

N/A

-

8 Weeks

BGA

YES

119

RAM, SRAM

Tape & Reel

2012

e1

yes

活跃

3 (168 Hours)

119

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

260

1

166MHz

INDUSTRIAL

Parallel

1

0.265mA

3-STATE

20b

18 Mb

0.06A

3.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

表面贴装

PLCC

52

270mA

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

BATTERY BACK-UP OPERATION

5V

QUAD

J BEND

225

1

5V

INDUSTRIAL

Parallel

4kB

2

55 ns

4KX8

3-STATE

24b

32 kb

0.03A

COMMON

Asynchronous

8b

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

无

符合RoHS标准

含铅

N/A

-

7 Weeks

表面贴装

208

360mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE

3.3V

BOTTOM

BALL

225

1

0.8mm

100MHz

20

COMMERCIAL

Parallel

2

5 ns

3-STATE

30b

1.1 Mb

COMMON

Synchronous

36b

3.45V

3.15V

15mm

15mm

1.4mm

无

符合RoHS标准

含铅

N/A

-

8 Weeks

表面贴装

BGA

119

215mA

RAM, SRAM

Tape & Reel

2012

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

2.5V

BOTTOM

BALL

225

1

150MHz

COMMERCIAL

Parallel

1

3.8 ns

3-STATE

19b

18 Mb

0.04A

COMMON

Synchronous

36b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

无

符合RoHS标准

含铅

N/A

-

12 Weeks

LQFP

YES

100

RAM, SRAM

Tape & Reel

2012

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

85°C

-40°C

流水线结构

3.3V

QUAD

鸥翼

260

1

0.65mm

133MHz

30

INDUSTRIAL

Parallel

1

0.26mA

3-STATE

17b

4.5 Mb

0.035A

4.2 ns

COMMON

3.465V

20mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

表面贴装

32

140mA

RAM, SDR, SRAM - Asynchronous

2013

e3

yes

活跃

3 (168 Hours)

32

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

J BEND

260

1

INDUSTRIAL

Parallel

128kB

1

12 ns

3-STATE

17b

1 Mb

COMMON

Asynchronous

8b

3V

3.6V

3V

3.7592mm

21.95mm

7.6mm

2.67mm

无

符合RoHS标准

无铅

N/A

-

10 Weeks

CDIP

NO

28

RAM, SDR, SRAM - Asynchronous

Military grade

2011

e0

no

活跃

1 (Unlimited)

28

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

DUAL

THROUGH-HOLE

240

1

2.54mm

5V

MILITARY

Parallel

8kB

1

55 ns

8KX8

3-STATE

13b

64 kb

0.0002A

MIL-STD-883 Class B

COMMON

2V

5.5V

4.5V

37.72mm

7.62mm

3.56mm

无

符合RoHS标准

含铅

N/A

-

12 Weeks

表面贴装

TFBGA

48

170mA

RAM, SDR, SRAM - Asynchronous

2012

e0

no

活跃

4 (72 Hours)

48

Tin/Lead (Sn63Pb37)

85°C

-40°C

3.3V

BOTTOM

BALL

225

1

INDUSTRIAL

Parallel

512kB

1

12 ns

18b

4 Mb

Asynchronous

16b

3.6V

3V

9mm

9mm

1.2mm

无

符合RoHS标准

含铅

N/A

-

7 Weeks

表面贴装

208

450mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

2.5V

BOTTOM

BALL

225

1

0.8mm

166MHz

20

COMMERCIAL

Parallel

2

12 ns

64KX36

3-STATE

32b

2.3 Mb

0.015A

COMMON

Synchronous

36b

2.6V

2.4V

15mm

15mm

1.4mm

无

符合RoHS标准

含铅

N/A

-

7 Weeks

PLCC

YES

52

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

2.3kB

2

25 ns

3-STATE

22b

18 kb

0.015A

COMMON

2V

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

无

符合RoHS标准

含铅

N/A

-

12 Weeks

表面贴装

44

170mA

RAM, SDR, SRAM - Asynchronous

Tape & Reel

2004

e3

yes

活跃

3 (168 Hours)

44

Matte Tin (Sn) - annealed

70°C

0°C

5V

DUAL

J BEND

260

1

5V

COMMERCIAL

Parallel

128kB

1

20 ns

3-STATE

16b

1 Mb

COMMON

Asynchronous

16b

5.5V

4.5V

3.683mm

28.6mm

10.2mm

2.9mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

表面贴装

TQFP

100

335mA

RAM, SDR, SRAM

2009

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

85°C

-40°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

260

1

0.5mm

30

5V

INDUSTRIAL

Parallel

64kB

2

20 ns

3-STATE

15b

512 kb

0.01A

COMMON

Asynchronous

16b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

无

符合RoHS标准

无铅

N/A

-

7 Weeks

表面贴装

BGA

119

340mA

RAM, SRAM

2009

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

225

1

166MHz

20

COMMERCIAL

Parallel

1

3.5 ns

3-STATE

19b

9 Mb

0.05A

COMMON

Synchronous

18b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

无

符合RoHS标准

含铅

N/A

-

7 Weeks

表面贴装

208

450mA

RAM, SRAM

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

2.5V

BOTTOM

BALL

225

1

0.8mm

166MHz

COMMERCIAL

Parallel

2

12 ns

3-STATE

34b

4.5 Mb

0.015A

COMMON

Synchronous

36b

2.6V

2.4V

15mm

15mm

1.4mm

无

符合RoHS标准

含铅