品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71V3557S75BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 275mA | RAM, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 1 | 7.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | IDT71V416S10PH | Integrated Device Technology (IDT) | 数据表 | 14 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | 200mA | RAM, SRAM - Asynchronous | Rail/Tube | 2007 | e0 | no | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 10 ns | 3-STATE | 16 | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | YES | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | 71V416S15BEI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 170mA | RAM, SDR, SRAM - Asynchronous | 2014 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 71V016SA15YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 130mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | 71V30L35TFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 145mA | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 10b | 8 kb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 70V659S12DRI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 515mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 512kB | 2 | 12 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 70V3389S5BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 208 | 415mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 100MHz | 20 | INDUSTRIAL | Parallel | 128kB | 2 | 5 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 71T75902S75BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 275mA | RAM, SRAM | Tape & Reel | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 1 | 7.5 ns | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
![]() | 70V657S10BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 500mA | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | 30 | COMMERCIAL | Parallel | 128kB | 2 | 10 ns | 3-STATE | 30b | 1.1 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
![]() | 70V7519S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 675mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 7024L15PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
![]() | 71V65703S80BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | INDUSTRIAL | Parallel | 1 | 256KX36 | 18b | 9 Mb | 8 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
![]() | 71V416L12YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 170mA | RAM, SDR, SRAM - Asynchronous | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 未说明 | 不合格 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 28.6mm | 10.2mm | 2.9mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | 71V65903S80PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | 鸥翼 | 260 | 1 | 95MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 8 ns | 19b | 9 Mb | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | 70V658S12BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 515mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 20 | INDUSTRIAL | Parallel | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 71V65903S85PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 225mA | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | 鸥翼 | 260 | 1 | 91MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 8.5 ns | 19b | 9 Mb | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | IDT71V256SA10Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2010 | e0 | no | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.1mA | 32KX8 | 3-STATE | 8 | 0.002A | 262144 bit | 10 ns | COMMON | 3V | 3.6V | 3V | YES | 3.556mm | 17.9324mm | 7.5184mm | 符合RoHS标准 | |||||||||||||||||||||||
![]() | 71V3577S75BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 255mA | 117MHz | RAM, SDR, SRAM | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流线型结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 117MHz | 30 | 255mA | COMMERCIAL | Parallel | 512kB | 1 | 7.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
![]() | IDT71V124SA20TYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e3 | 3 (168 Hours) | 32 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.115mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | 7133LA25PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | INDUSTRIAL | Parallel | 4kB | 2 | 0.3mA | 25 ns | 3-STATE | 22b | 32 kb | 0.004A | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
![]() | 71V3577S75BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 255mA | 117MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 117MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 7.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
![]() | 71V3577S75BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | RAM, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 117MHz | INDUSTRIAL | Parallel | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
![]() | 7130SA25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 220mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT7164S20TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 28 | 100mA | RAM, SRAM - Asynchronous | Rail/Tube | 2009 | e0 | 28 | EAR99 | 70°C | 0°C | 5V | DUAL | 225 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 8KX8 | 3-STATE | 8 | 13b | 64 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | YES | 4.572mm | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | 71V35761SA200BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 360mA | 200MHz | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 200MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.1 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 |
71V3557S75BGG
Integrated Device Technology (IDT)
分类:Memory
IDT71V416S10PH
Integrated Device Technology (IDT)
分类:Memory
71V416S15BEI8
Integrated Device Technology (IDT)
分类:Memory
71V016SA15YG8
Integrated Device Technology (IDT)
分类:Memory
71V30L35TFI
Integrated Device Technology (IDT)
分类:Memory
70V659S12DRI
Integrated Device Technology (IDT)
分类:Memory
70V3389S5BFI
Integrated Device Technology (IDT)
分类:Memory
71T75902S75BGG8
Integrated Device Technology (IDT)
分类:Memory
70V657S10BCG
Integrated Device Technology (IDT)
分类:Memory
70V7519S133BFI8
Integrated Device Technology (IDT)
分类:Memory
7024L15PFG
Integrated Device Technology (IDT)
分类:Memory
71V65703S80BQI8
Integrated Device Technology (IDT)
分类:Memory
71V416L12YG
Integrated Device Technology (IDT)
分类:Memory
71V65903S80PFG
Integrated Device Technology (IDT)
分类:Memory
70V658S12BFI8
Integrated Device Technology (IDT)
分类:Memory
71V65903S85PFG
Integrated Device Technology (IDT)
分类:Memory
IDT71V256SA10Y
Integrated Device Technology (IDT)
分类:Memory
71V3577S75BGG
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA20TYGI
Integrated Device Technology (IDT)
分类:Memory
7133LA25PFGI8
Integrated Device Technology (IDT)
分类:Memory
71V3577S75BG
Integrated Device Technology (IDT)
分类:Memory
71V3577S75BGGI
Integrated Device Technology (IDT)
分类:Memory
7130SA25J
Integrated Device Technology (IDT)
分类:Memory
IDT7164S20TP
Integrated Device Technology (IDT)
分类:Memory
71V35761SA200BGG
Integrated Device Technology (IDT)
分类:Memory
