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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V424L12PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.155mA | 512KX8 | 3-STATE | 8 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 7164L20YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 1 | 20 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 70V7319S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 675mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 18b | 4 Mb | 0.04A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 70V3599S133BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 400mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 512kB | 2 | 25 ns | 3-STATE | 34b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 70V659S12DRGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 515mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 208 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 512kB | 2 | 12 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.15V | 3.45V | 2.4V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71V65603S133BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 320mA | 133MHz | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | INDUSTRIAL | Parallel | 1.1MB | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.06A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V3379S6BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 310mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 83.3MHz | COMMERCIAL | Parallel | 2 | 6 ns | 3-STATE | 30b | 576 kb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 71V65603S150BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 325mA | 150MHz | RAM, SDR, SRAM | 2007 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 6.7 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71342LA20JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 240mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 70V3399S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 256 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 17b | 2.3 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70V3589S133BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 400mA | 133MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 256kB | 2 | 25 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 70V05L20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 0.175mA | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 71V256SA15YG8 | Integrated Device Technology (IDT) | 数据表 | 94 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 85mA | RAM, SDR, SRAM - Asynchronous | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 85mA | COMMERCIAL | Parallel | 32kB | 1 | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 7132SA55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 155mA | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 7009L15PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 340mA | RAM, SRAM | Tape & Reel | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 17b | 1 Mb | 0.003A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 7025L15PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 1 | 0.5mm | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 8KX16 | 3-STATE | 13b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71V3577S85BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | FBGA | 165 | 190mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 87MHz | 20 | INDUSTRIAL | Parallel | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70V7519S133BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 645mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | INDUSTRIAL | Parallel | 1.1MB | 2 | 25 ns | 3-STATE | 18b | 9 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 71V65903S85BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH | 3.3V | BOTTOM | BALL | 260 | 1 | 30 | COMMERCIAL | Parallel | 1 | 19b | 9 Mb | 8.5 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||
 | IDT71V432S7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2014 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 66MHz | 0.16mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 7 ns | COMMON | 3.14V | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
 | 71V016SA20BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 120mA | RAM, SDR, SRAM - Asynchronous | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 30 | 不合格 | COMMERCIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 7mm | 7mm | 1.4mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 71V67703S85BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 20 | INDUSTRIAL | Parallel | 1 | 87MHz | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | 8.5 ns | COMMON | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
 | 71V424S10YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | 180mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 512kB | 1 | 10 ns | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V416YS10PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | 200mA | RAM, SRAM - Asynchronous | Bulk | 2005 | e3 | yes | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 1 | 10 ns | 3-STATE | 16 | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | IDT71V3559S85PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 90MHz | 0.235mA | 256KX18 | 3-STATE | 18 | 0.045A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant |
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IDT71V424L12PHI
Integrated Device Technology (IDT)
分类:Memory
-
7164L20YG8
Integrated Device Technology (IDT)
分类:Memory
-
70V7319S133BFI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3599S133BC
Integrated Device Technology (IDT)
分类:Memory
-
70V659S12DRGI
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S133BQI
Integrated Device Technology (IDT)
分类:Memory
-
70V3379S6BC
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S150BQG
Integrated Device Technology (IDT)
分类:Memory
-
71342LA20JG
Integrated Device Technology (IDT)
分类:Memory
-
70V3399S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
70V3589S133BC
Integrated Device Technology (IDT)
分类:Memory
-
70V05L20J
Integrated Device Technology (IDT)
分类:Memory
-
71V256SA15YG8
Integrated Device Technology (IDT)
分类:Memory
-
7132SA55J
Integrated Device Technology (IDT)
分类:Memory
-
7009L15PFG8
Integrated Device Technology (IDT)
分类:Memory
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7025L15PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S85BQI8
Integrated Device Technology (IDT)
分类:Memory
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70V7519S133BC
Integrated Device Technology (IDT)
分类:Memory
-
71V65903S85BQG
Integrated Device Technology (IDT)
分类:Memory
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IDT71V432S7PF
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA20BFG
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S85BQI8
Integrated Device Technology (IDT)
分类:Memory
-
71V424S10YG8
Integrated Device Technology (IDT)
分类:Memory
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71V416YS10PHG
Integrated Device Technology (IDT)
分类:Memory
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IDT71V3559S85PFI
Integrated Device Technology (IDT)
分类:Memory