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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | Current - Supply (Nom) | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 电压 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT7164L20Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | RAM, SRAM - Asynchronous | 90mA | Rail/Tube | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 8KX8 | 3-STATE | 8 | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 3.556mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | IDT71124S20Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.14mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 3.683mm | 20.955mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | IDT709199L7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | not_compliant | 20 | S-PQFP-G100 | 不合格 | 5V | COMMERCIAL | Parallel | 2 | SYNCHRONOUS | 83MHz | 0.465mA | 128KX9 | 3-STATE | 9 | 0.003A | 1179648 bit | 18 ns | COMMON | 4.5V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||
 | IDT71V424S12PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.17mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||
 | 71V25761S166PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 166MHz | 330mA | RAM, SDR, SRAM | 2009 | e3 | yes | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
 | IDT71V3576S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | 260mA | 2012 | e0 | 3 (168 Hours) | 100 | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 4.2 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V632S5PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 100MHz | 0.2mA | 64KX32 | 3-STATE | 32 | 0.015A | 2097152 bit | 5 ns | COMMON | 3.14V | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||
 | IDT71V432S5PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2014 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.2mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 5 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||
 | 71016S12PH | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Bulk | 71016S | 活跃 | IDT, Integrated Device Technology Inc | Volatile | 0°C ~ 70°C (TA) | - | SRAM - Asynchronous | 4.5V ~ 5.5V | 1Mbit | 12 ns | SRAM | Parallel | 12ns | 64K x 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V416L12PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | RAM, SRAM - Asynchronous | 170mA | Rail/Tube | 2007 | e0 | no | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 12 ns | 3-STATE | 16 | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||
 | IDT71V016SA12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.15mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 12 ns | COMMON | 3.15V | 3.6V | 3V | YES | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||
 | IDT71P72804S167BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 165 | QDR, RAM, SRAM | 2006 | e0 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 167MHz | 20 | 不合格 | COMMERCIAL | Parallel | 2 | SYNCHRONOUS | 500 ps | 1MX18 | 3-STATE | 18 | 19b | 18874368 bit | SEPARATE | 1.9V | 1.7V | 15mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | IDT6116SA25TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.12mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 25 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||
 | IDT71V016SA12Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.15mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 12 ns | COMMON | 3.15V | 3.6V | 3V | YES | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||
 | IDT6116LA20SO | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOIC | 24 | RAM, SRAM - Asynchronous | 95mA | Rail/Tube | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | DUAL | 鸥翼 | 225 | 1 | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 2.65mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||
 | 71T75802S200BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | 200MHz | RAM, SDR, SRAM | 2013 | e1 | yes | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 200MHz | 30 | INDUSTRIAL | Parallel | 2.3MB | 1 | 0.295mA | 3.2 ns | 3-STATE | 18 | 20b | 18 Mb | 0.06A | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||
 | 71V546S100PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TQFP | YES | 100 | 100MHz | RAM, SDR, SRAM | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 0.26mA | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | 70V24L15PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 185mA | INDUSTRIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 24b | 64 kb | Asynchronous | 16b | 3.6V | 3V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | 7133LA20PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 280mA | Bulk | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 70°C | -55°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
 | IDT71V256SA10PZ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSSOP | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 240 | 1 | 0.55mm | not_compliant | 20 | R-PDSO-G28 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.1mA | 32KX8 | 3-STATE | 8 | 0.002A | 262144 bit | 10 ns | COMMON | 3V | 3.6V | 3V | YES | 1.2mm | 11.8mm | 8mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||
 | IDT71256L35YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2005 | e0 | no | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 20 | 不合格 | 5V | INDUSTRIAL | 5V | Parallel | 0.105mA | 32KX8 | 3-STATE | 8 | 0.0002A | 262144 bit | 35 ns | COMMON | 3.556mm | 17.9324mm | 7.5184mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | IDT6116LA45TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 24 | RAM, SRAM - Asynchronous | 95mA | Rail/Tube | 2008 | e3 | 24 | EAR99 | 哑光锡 | 70°C | 0°C | 5V | DUAL | 260 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 45 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||
 | 70T3589S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | RAM, SRAM | 450mA | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
 | IDT6116SA35TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.1mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 35 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||
 | IDT71V416S12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.18mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | YES | 3.683mm | 28.575mm | 10.16mm | 符合RoHS标准 |
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IDT7164L20Y
Integrated Device Technology (IDT)
分类:Memory
-
IDT71124S20Y
Integrated Device Technology (IDT)
分类:Memory
-
IDT709199L7PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424S12PH
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S166PFGI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3576S133PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V632S5PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V432S5PF
Integrated Device Technology (IDT)
分类:Memory
-
71016S12PH
Integrated Device Technology
分类:Memory
-
IDT71V416L12PHI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA12Y
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P72804S167BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116SA25TP
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA12Y8
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116LA20SO
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S200BGGI
Integrated Device Technology (IDT)
分类:Memory
-
71V546S100PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V24L15PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7133LA20PFG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V256SA10PZ
Integrated Device Technology (IDT)
分类:Memory
-
IDT71256L35YI
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116LA45TPG
Integrated Device Technology (IDT)
分类:Memory
-
70T3589S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116SA35TP
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416S12Y
Integrated Device Technology (IDT)
分类:Memory