品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | Current - Supply (Nom) | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT7164L20Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | RAM, SRAM - Asynchronous | 90mA | Rail/Tube | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 8KX8 | 3-STATE | 8 | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 3.556mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||
![]() | IDT71124S20Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.14mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 3.683mm | 20.955mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||
![]() | IDT709199L7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | not_compliant | 20 | S-PQFP-G100 | 不合格 | 5V | COMMERCIAL | Parallel | 2 | SYNCHRONOUS | 83MHz | 0.465mA | 128KX9 | 3-STATE | 9 | 0.003A | 1179648 bit | 18 ns | COMMON | 4.5V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||
![]() | IDT71V424S12PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.17mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||
![]() | 71V25761S166PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 166MHz | 330mA | RAM, SDR, SRAM | 2009 | e3 | yes | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||
![]() | IDT71V3576S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | 260mA | 2012 | e0 | 3 (168 Hours) | 100 | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 4.2 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V632S5PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 100MHz | 0.2mA | 64KX32 | 3-STATE | 32 | 0.015A | 2097152 bit | 5 ns | COMMON | 3.14V | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
![]() | IDT71V432S5PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2014 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.2mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 5 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||
![]() | 71016S12PH | Integrated Device Technology | 数据表 | 486 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Bulk | 71016S | 活跃 | IDT, Integrated Device Technology Inc | Volatile | 0°C ~ 70°C (TA) | - | SRAM - Asynchronous | 4.5V ~ 5.5V | 1Mbit | 12 ns | SRAM | Parallel | 12ns | 64K x 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71T75802S200BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | 200MHz | RAM, SDR, SRAM | 2013 | e1 | yes | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 200MHz | 30 | INDUSTRIAL | Parallel | 2.3MB | 1 | 0.295mA | 3.2 ns | 3-STATE | 18 | 20b | 18 Mb | 0.06A | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 22mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||
![]() | IDT71V416L12PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | RAM, SRAM - Asynchronous | 170mA | Rail/Tube | 2007 | e0 | no | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 12 ns | 3-STATE | 16 | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
![]() | IDT6116LA20SO | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOIC | 24 | RAM, SRAM - Asynchronous | 95mA | Rail/Tube | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | DUAL | 鸥翼 | 225 | 1 | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 2KX8 | 3-STATE | 8 | 11b | 16 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 2.65mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | 71256SA20TPGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 28 | 145mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | 260 | 1 | 2.54mm | INDUSTRIAL | Parallel | 32kB | 1 | 20 ns | 32KX8 | 15b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 4.572mm | 34.3mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | 7026L15JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LCC | YES | 84 | RAM, SRAM | 2009 | 84 | EAR99 | 70°C | 0°C | 5V | QUAD | J BEND | 1 | COMMERCIAL | Parallel | 2 | 16KX16 | 16 | 28b | 256 kb | 15 ns | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V3556SA100BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 100MHz | 255mA | RAM, SDR, SRAM | 2015 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | 255mA | INDUSTRIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
![]() | 71V3556SA150BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | 119 | RAM, SRAM | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 锡银铜 | 85°C | -40°C | 3.3V | 260 | 150MHz | Parallel | 1 | 17b | 4 Mb | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70T3589S200BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | RAM, SRAM | 525mA | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 200MHz | COMMERCIAL | Parallel | 2 | 10 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
![]() | 71V65803S133BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | RAM, SRAM | 320mA | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | INDUSTRIAL | Parallel | 1 | 4.2 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 71V3556S133PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 133MHz | 310mA | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | IDT7164L20TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.15mA | 8KX8 | 3-STATE | 8 | 0.00006A | 65536 bit | 19 ns | COMMON | 2V | 5.5V | 4.5V | YES | 4.572mm | 34.671mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
![]() | 71V3556SA166BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 166MHz | 350mA | RAM, SDR, SRAM | 2006 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | 不合格 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 71V424L12YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | RAM, SDR, SRAM - Asynchronous | 155mA | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 未说明 | 不合格 | COMMERCIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.76mm | 23.4mm | 10.2mm | 2.2mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | 71V416S12BEI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 180mA | RAM, SDR, SRAM - Asynchronous | 2012 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
![]() | IDT71256SA15Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2010 | e0 | no | 28 | EAR99 | 锡铅 | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 32KX8 | 3-STATE | 8 | 262144 bit | 15 ns | 5.5V | 4.5V | YES | 3.556mm | 17.9324mm | 7.5184mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | 71V321S25TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 130mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池操作 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
IDT7164L20Y
Integrated Device Technology (IDT)
分类:Memory
IDT71124S20Y
Integrated Device Technology (IDT)
分类:Memory
IDT709199L7PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V424S12PH
Integrated Device Technology (IDT)
分类:Memory
71V25761S166PFGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V3576S133PFI
Integrated Device Technology (IDT)
分类:Memory
IDT71V632S5PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V432S5PF
Integrated Device Technology (IDT)
分类:Memory
71016S12PH
Integrated Device Technology
分类:Memory
71T75802S200BGGI
Integrated Device Technology (IDT)
分类:Memory
IDT71V416L12PHI
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA20SO
Integrated Device Technology (IDT)
分类:Memory
71256SA20TPGI
Integrated Device Technology (IDT)
分类:Memory
7026L15JG
Integrated Device Technology (IDT)
分类:Memory
71V3556SA100BGI8
Integrated Device Technology (IDT)
分类:Memory
71V3556SA150BGGI
Integrated Device Technology (IDT)
分类:Memory
70T3589S200BC
Integrated Device Technology (IDT)
分类:Memory
71V65803S133BQI8
Integrated Device Technology (IDT)
分类:Memory
71V3556S133PFGI
Integrated Device Technology (IDT)
分类:Memory
IDT7164L20TP
Integrated Device Technology (IDT)
分类:Memory
71V3556SA166BQG
Integrated Device Technology (IDT)
分类:Memory
71V424L12YG
Integrated Device Technology (IDT)
分类:Memory
71V416S12BEI8
Integrated Device Technology (IDT)
分类:Memory
IDT71256SA15Y8
Integrated Device Technology (IDT)
分类:Memory
71V321S25TF
Integrated Device Technology (IDT)
分类:Memory
