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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V24L15PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 185mA | INDUSTRIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 24b | 64 kb | Asynchronous | 16b | 3.6V | 3V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 71V25761S183PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 350mA | 183MHz | RAM, SDR, SRAM | Bulk | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 183MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 71V416L15PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 160mA | RAM, SDR, SRAM - Asynchronous | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 7007S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 305mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V321S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 125mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 71V67703S80BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 210mA | 100MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70V3589S166BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 64KX36 | 3-STATE | 16b | 2.3 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 7164S20YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 100mA | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 1 | 20 ns | 8KX8 | 3-STATE | 13b | 64 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 70V24L20PFGI | Integrated Device Technology (IDT) | 数据表 | 594 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 195mA | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 7134LA20PDG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PDIP | NO | 48 | RAM, SDR, SRAM | Bulk | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 48 | EAR99 | 哑光锡 | 70°C | 0°C | 5V | DUAL | THROUGH-HOLE | 260 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V016SA20YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 120mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71342LA25JGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | 5V | QUAD | 260 | 1 | 5V | INDUSTRIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71V424L15YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | 145mA | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.76mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 7027L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 265mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 25 ns | 3-STATE | 30b | 512 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 70V9099L7PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 83.3MHz | 20 | COMMERCIAL | Parallel | 128kB | 2 | 18 ns | 3-STATE | 34b | 1 Mb | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V632S5PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 200mA | 100MHz | RAM, SDR, SRAM | 2015 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | ALSO REQUIRES 3.3V I/O SUPPLY | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | INDUSTRIAL | Parallel | 256kB | 1 | 5 ns | 64KX32 | 3-STATE | 16b | 2 Mb | COMMON | Synchronous | 32b | 3.63V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 70T651S10BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 405mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 1.1MB | 2 | 10 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70T3509MS133BPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | BGA | 256 | 1.12A | 133MHz | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 133MHz | 30 | 1.12A | COMMERCIAL | Parallel | 4.5MB | 2 | 4.2 ns | 1MX36 | 3-STATE | 40b | 36 Mb | 0.06A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.7mm | 17mm | 17mm | 1.76mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 71V35761SA166BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 320mA | 166MHz | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | COMMERCIAL | Parallel | 576kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71V35761SA183BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 340mA | 183MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 183MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V3558S100PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LQFP | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 0.25mA | 5 ns | 3-STATE | 18 | 18b | 0.04A | COMMON | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
 | IDT71V124SA10Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 145mA | RAM, SRAM - Asynchronous | Rail/Tube | 2007 | e0 | 3 (168 Hours) | 32 | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 10 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3.6V | 3.15V | 3.683mm | 20.955mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
 | 71V65803S100BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 270mA | RAM, SRAM | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | INDUSTRIAL | Parallel | 1 | 5 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71V124SA12PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | 30 | R-PDSO-G32 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.13mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 3V | 3.6V | 3.15V | 1.2mm | 20.95mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||
 | 71V25761S183PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 340mA | 183MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 183MHz | COMMERCIAL | Parallel | 512kB | 1 | 3.3 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 |
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70V24L15PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S183PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71V416L15PHG
Integrated Device Technology (IDT)
分类:Memory
-
7007S25PF
Integrated Device Technology (IDT)
分类:Memory
-
71V321S35J
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S80BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3589S166BF8
Integrated Device Technology (IDT)
分类:Memory
-
7164S20YG
Integrated Device Technology (IDT)
分类:Memory
-
70V24L20PFGI
Integrated Device Technology (IDT)
分类:Memory
-
7134LA20PDG
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA20YGI
Integrated Device Technology (IDT)
分类:Memory
-
71342LA25JGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V424L15YGI
Integrated Device Technology (IDT)
分类:Memory
-
7027L25PF
Integrated Device Technology (IDT)
分类:Memory
-
70V9099L7PF
Integrated Device Technology (IDT)
分类:Memory
-
71V632S5PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70T651S10BC
Integrated Device Technology (IDT)
分类:Memory
-
70T3509MS133BPG
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA166BGG
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA183BG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3558S100PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA10Y
Integrated Device Technology (IDT)
分类:Memory
-
71V65803S100BGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA12PH
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S183PFG8
Integrated Device Technology (IDT)
分类:Memory