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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V3577S75BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 117MHz | INDUSTRIAL | Parallel | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
 | IDT71V256SA15Y | Integrated Device Technology (IDT) | 数据表 | 5 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | 85mA | RAM, SRAM - Asynchronous | Rail/Tube | 1997 | e0 | no | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 15 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | YES | 3.556mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 70T3399S166BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | RAM, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 17b | 2 Mb | 0.015A | COMMON | Synchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71024S20YI | Integrated Device Technology (IDT) | 数据表 | 3400 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 140mA | RAM, SRAM - Asynchronous | Rail/Tube | 2007 | e0 | no | 3 (168 Hours) | 32 | 85°C | -40°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 20 | 不合格 | 5V | INDUSTRIAL | Parallel | 1 | 20 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | YES | 3.683mm | 20.96mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | IDT71V3576S133PF | Integrated Device Technology (IDT) | 数据表 | 70 In Stock | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2012 | e0 | no | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 70V24L20PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 195mA | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71T75902S85BG | Integrated Device Technology (IDT) | 数据表 | 89 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 225mA | RAM, SDR, SRAM | 100MHz | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 91MHz | 20 | COMMERCIAL | Parallel | 2.3MB | 1 | 8.5 ns | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71T75802S150BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | RAM, SRAM | Tape & Reel | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 150MHz | INDUSTRIAL | Parallel | 1 | 0.235mA | 3-STATE | 20b | 18 Mb | 0.06A | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 7025L20PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 320mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 不合格 | 5V | INDUSTRIAL | Parallel | 16kB | 2 | 20 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 70T3589S133BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | RAM, SRAM | 2009 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | Parallel | 2 | 15 ns | 32b | 2.3 Mb | Synchronous | 36b | 2.6V | 2.4V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
 | IDT71V424L15YI | Integrated Device Technology (IDT) | 数据表 | 8998 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 36 | 145mA | RAM, SRAM - Asynchronous | Rail/Tube | 2009 | e0 | 3 (168 Hours) | 36 | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | INDUSTRIAL | Parallel | 1 | 15 ns | 3-STATE | 8 | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 23.495mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | IDT6116LA45TP | Integrated Device Technology (IDT) | 数据表 | 617 In Stock | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.075mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 45 ns | COMMON | 2V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 71V3577S75PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 265mA | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 85°C | -40°C | 3.3V | 260 | 117MHz | Parallel | 1 | 7.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | 71024S12TYG | Integrated Device Technology (IDT) | 数据表 | 358 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 160mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.759mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 7164L25YG | Integrated Device Technology (IDT) | 数据表 | 1000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 80mA | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 1 | 25 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71V3558SA100BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 250mA | 100MHz | RAM, SDR, SRAM | 2013 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71V124SA12YG | Integrated Device Technology (IDT) | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 130mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 130mA | COMMERCIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 7130LA55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 110mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 70V07L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 140mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 不合格 | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 3-STATE | 30b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71256SA20PZG | Integrated Device Technology (IDT) | 数据表 | 167 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TSOP | YES | 28 | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | 30 | 5V | COMMERCIAL | Parallel | 32kB | 1 | 20 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | 5.5V | 4.5V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 70V05L20PFGI | Integrated Device Technology (IDT) | 数据表 | 159 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 0.195mA | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71321SA55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 155mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70T3319S166BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 36b | 4 Mb | 0.015A | COMMON | Synchronous | 18b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 71V65903S85BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | YES | 119 | RAM, SRAM | Bulk | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH | 3.3V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 1 | 19b | 9 Mb | 8.5 ns | 3.465V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 70V24S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 180mA | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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71V3577S75BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V256SA15Y
Integrated Device Technology (IDT)
分类:Memory
-
70T3399S166BC
Integrated Device Technology (IDT)
分类:Memory
-
IDT71024S20YI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3576S133PF
Integrated Device Technology (IDT)
分类:Memory
-
70V24L20PFI
Integrated Device Technology (IDT)
分类:Memory
-
71T75902S85BG
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S150BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
7025L20PFI
Integrated Device Technology (IDT)
分类:Memory
-
70T3589S133BCI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424L15YI
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116LA45TP
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S75PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
71024S12TYG
Integrated Device Technology (IDT)
分类:Memory
-
7164L25YG
Integrated Device Technology (IDT)
分类:Memory
-
71V3558SA100BQG
Integrated Device Technology (IDT)
分类:Memory
-
71V124SA12YG
Integrated Device Technology (IDT)
分类:Memory
-
7130LA55PF
Integrated Device Technology (IDT)
分类:Memory
-
70V07L25PF
Integrated Device Technology (IDT)
分类:Memory
-
71256SA20PZG
Integrated Device Technology (IDT)
分类:Memory
-
70V05L20PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71321SA55J
Integrated Device Technology (IDT)
分类:Memory
-
70T3319S166BF
Integrated Device Technology (IDT)
分类:Memory
-
71V65903S85BGGI
Integrated Device Technology (IDT)
分类:Memory
-
70V24S55PF
Integrated Device Technology (IDT)
分类:Memory