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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | Current - Supply (Nom) | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 组织的记忆 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V416S15YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | RAM, SDR, SRAM - Asynchronous | 170mA | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||
 | 70T3399S200BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 200MHz | 525mA | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 200MHz | COMMERCIAL | Parallel | 256kB | 2 | 3.4 ns | 3-STATE | 34b | 2 Mb | 0.015A | COMMON | Synchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 71V416L12YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | RAM, SDR, SRAM - Asynchronous | 170mA | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 哑光锡 | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||
 | 7005S20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | RAM, SDR, SRAM | 290mA | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
 | 71342LA70J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 70 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 70V631S12BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | RAM, SRAM | 515mA | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | INDUSTRIAL | Parallel | 2 | 12 ns | 3-STATE | 18b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
 | 7015L20PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 310mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | INDUSTRIAL | Parallel | 9kB | 2 | 20 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.01A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
 | 71V3557S85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 100MHz | 225mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 91MHz | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
 | 70V3579S5BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | RAM, SDR, SRAM | 415mA | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | 100MHz | 30 | INDUSTRIAL | Parallel | 128kB | 2 | 5 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
 | 71V016SA10PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 160mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 128kB | 1 | 10 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3.6V | 3.15V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||
 | IDT71V416L10PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.18mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 10 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
 | 6116LA25SOGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 24 | 95mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | 鸥翼 | 260 | 1 | 30 | 5V | INDUSTRIAL | Parallel | 2kB | 1 | 25 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.00003A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 15.4mm | 7.6mm | 2.34mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
 | 71V424S10YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | RAM, SDR, SRAM - Asynchronous | 180mA | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 10 ns | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.76mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||
 | 71V424S12YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | YES | 36 | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | 3V | 3.6V | 3V | 3.683mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
 | 71V424S15YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | RAM, SDR, SRAM - Asynchronous | 160mA | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.76mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||
 | 7005S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 35 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 71V424S12PHGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 170mA | RAM, SDR, SRAM - Asynchronous | 卷带 | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 12 ns | 3-STATE | 19b | 4 Mb | 0.02A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 7025S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 35 ns | 26b | 128 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 7024S55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 250mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
| 7130SA100CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 190mA | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 100 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 71V35761S200PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 200MHz | 360mA | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 200MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.1 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
 | 7024S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 265mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
| 71V424S15PH | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | Obsolete | 71V424 | IDT, Integrated Device Technology Inc | Bulk | 0°C ~ 70°C (TA) | - | SRAM - Asynchronous | 3V ~ 3.6V | 4Mbit | 15 ns | SRAM | Parallel | 15ns | 512K x 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7133SA35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 295mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 7024L55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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71V416S15YGI
Integrated Device Technology (IDT)
分类:Memory
-
70T3399S200BC
Integrated Device Technology (IDT)
分类:Memory
-
71V416L12YGI8
Integrated Device Technology (IDT)
分类:Memory
-
7005S20G
Integrated Device Technology (IDT)
分类:Memory
-
71342LA70J
Integrated Device Technology (IDT)
分类:Memory
-
70V631S12BCI8
Integrated Device Technology (IDT)
分类:Memory
-
7015L20PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S85BG
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S5BCGI
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA10PHG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416L10PH
Integrated Device Technology (IDT)
分类:Memory
-
6116LA25SOGI
Integrated Device Technology (IDT)
分类:Memory
-
71V424S10YGI
Integrated Device Technology (IDT)
分类:Memory
-
71V424S12YGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V424S15YGI
Integrated Device Technology (IDT)
分类:Memory
-
7005S35J
Integrated Device Technology (IDT)
分类:Memory
-
71V424S12PHGI8
Integrated Device Technology (IDT)
分类:Memory
-
7025S35PF
Integrated Device Technology (IDT)
分类:Memory
-
7024S55J
Integrated Device Technology (IDT)
分类:Memory
-
7130SA100CB
Integrated Device Technology (IDT)
分类:Memory
-
71V35761S200PFG
Integrated Device Technology (IDT)
分类:Memory
-
7024S25PF
Integrated Device Technology (IDT)
分类:Memory
-
71V424S15PH
Integrated Device Technology
分类:Memory
-
7133SA35PF8
Integrated Device Technology (IDT)
分类:Memory
-
7024L55PF8
Integrated Device Technology (IDT)
分类:Memory