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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7024L35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 210mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 7024L17J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 260mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 17 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 7024L17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 84 | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 17 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 71V67903S85BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 190mA | RAM, SRAM | Tape & Reel | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 87MHz | 20 | COMMERCIAL | Parallel | 1 | 8.5 ns | 3-STATE | 19b | 9 Mb | 0.05A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 7130SA35P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 165mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 7024L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 84 | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 7024L20JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 320mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 7006S15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 310mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 15 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 70V18L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 235mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 72kB | 2 | 15 ns | 64KX9 | 3-STATE | 32b | 576 kb | 0.003A | COMMON | Asynchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 7130LA25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 170mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 25 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
 | 70V05L55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 155mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 7024S25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 265mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | IDT71V416S12PHG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 70T3539MS133BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 900mA | 133MHz | RAM, SDR, SRAM | 2009 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | 900mA | Parallel | 2.3MB | 2 | 4.2 ns | 38b | 18 Mb | Synchronous | 36b | 2.6V | 2.4V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
| 71V016SA10BFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | RAM, SDR, SRAM - Asynchronous | 2007 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 10 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3.6V | 3.15V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 70T3799MS166BBG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | BGA | YES | 324 | RAM, SRAM | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 324 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 166MHz | 30 | COMMERCIAL | Parallel | 2 | 0.9mA | 3-STATE | 34b | 9 Mb | COMMON | 19mm | 19mm | 1.76mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
| 7025L55G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 210mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | PERPENDICULAR | PIN/PEG | 1 | COMMERCIAL | Parallel | 16kB | 2 | 55 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 7024S15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 310mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 70V28L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 235mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 2 | 15 ns | 32b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
 | 7024L15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 260mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 7008S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 295mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 35 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 71V67602S150PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 305mA | 150MHz | RAM, SDR, SRAM | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 150MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 3.8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||
 | 71V35761SA200BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Discontinued | 3 (168 Hours) | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | 225 | 200MHz | Parallel | 1 | 3.1 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 7008L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 325mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 15 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.005A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 7133LA25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 270mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 |
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7024L35PF
Integrated Device Technology (IDT)
分类:Memory
-
7024L17J8
Integrated Device Technology (IDT)
分类:Memory
-
7024L17J
Integrated Device Technology (IDT)
分类:Memory
-
71V67903S85BQ8
Integrated Device Technology (IDT)
分类:Memory
-
7130SA35P
Integrated Device Technology (IDT)
分类:Memory
-
7024L35J
Integrated Device Technology (IDT)
分类:Memory
-
7024L20JI8
Integrated Device Technology (IDT)
分类:Memory
-
7006S15PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V18L15PF
Integrated Device Technology (IDT)
分类:Memory
-
7130LA25PF
Integrated Device Technology (IDT)
分类:Memory
-
70V05L55J8
Integrated Device Technology (IDT)
分类:Memory
-
7024S25J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416S12PHG
Integrated Device Technology
分类:Memory
-
70T3539MS133BCI
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA10BFGI
Integrated Device Technology (IDT)
分类:Memory
-
70T3799MS166BBG
Integrated Device Technology (IDT)
分类:Memory
-
7025L55G
Integrated Device Technology (IDT)
分类:Memory
-
7024S15PF
Integrated Device Technology (IDT)
分类:Memory
-
70V28L15PF
Integrated Device Technology (IDT)
分类:Memory
-
7024L15J8
Integrated Device Technology (IDT)
分类:Memory
-
7008S35J
Integrated Device Technology (IDT)
分类:Memory
-
71V67602S150PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA200BGI8
Integrated Device Technology (IDT)
分类:Memory
-
7008L15PF
Integrated Device Technology (IDT)
分类:Memory
-
7133LA25J8
Integrated Device Technology (IDT)
分类:Memory