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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | Current - Supply (Nom) | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 组织的记忆 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7027S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 305mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 25 ns | 3-STATE | 30b | 512 kb | 0.005A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 70T631S10BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 445mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 512kB | 2 | 10 ns | 3-STATE | 36b | 4 Mb | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7130SA25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 220mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7130SA55TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 155mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 55 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7142SA35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 165mA | RAM, SDR, SRAM | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V25761S166PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 320mA | 166MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V67903S75BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 285mA | RAM, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 117MHz | 20 | INDUSTRIAL | Parallel | 1 | 7.5 ns | 3-STATE | 19b | 9 Mb | 0.07A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7024L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 210mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7140SA25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 220mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7025S25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 265mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 25 ns | 26b | 128 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7133SA55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 285mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 55 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V2556SA133BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 300mA | 133MHz | RAM, SDR, SRAM | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 70V28L15PFG | Integrated Device Technology (IDT) | 数据表 | 1 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 235mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 2 | 15 ns | 32b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V67703S80BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 230mA | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | INDUSTRIAL | Parallel | 1 | 8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V65903S85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 225mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 91MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 8.5 ns | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 70T3519S133BFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | 133MHz | RAM, SDR, SRAM | Bulk | 2009 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | Parallel | 1.1MB | 2 | 4.2 ns | 36b | 9 Mb | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 7130SA20TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 250mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71321LA55J | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 52 | 52 | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 | CHIP CARRIER | 3 | 2000 | PLASTIC/EPOXY | LDCC52,.8SQ | 30 | 55 ns | 70 °C | 无 | IDT71321LA55J | 2048 words | 5 V | QCCJ | SQUARE | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 8.21 | LCC | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 8542.32.00.41 | SRAMs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | S-PQCC-J52 | 不合格 | 5 V | COMMERCIAL | 2 | ASYNCHRONOUS | 0.11 mA | 2KX8 | 3-STATE | 4.572 mm | 8 | 0.0015 A | 16384 bit | PARALLEL | COMMON | DUAL-PORT SRAM | 2 V | 5.5 V | 4.5 V | 19.1262 mm | 19.1262 mm | ||||||||||||||||||||||||||||||||||||||||||
| 71V416L15PHI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | IDT, Integrated Device Technology Inc | Bulk | 71V416L | 活跃 | Volatile | -40°C ~ 85°C (TA) | - | SRAM - Asynchronous | 3V ~ 3.6V | 4Mbit | 15 ns | SRAM | Parallel | 15ns | 256K x 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-8855201XA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71256SA15YG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V9289L7PRFG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | Volatile | 0°C ~ 70°C (TA) | Tray | -- | 活跃 | SRAM - Dual Port, Synchronous | 3 V ~ 3.6 V | 1Mb (64K x 16) | 7.5ns | SRAM | Parallel | -- | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-8976408MYA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT70V24S55PF | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-9166203MYA | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 |
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7027S25PF
Integrated Device Technology (IDT)
分类:Memory
-
70T631S10BCI
Integrated Device Technology (IDT)
分类:Memory
-
7130SA25PF8
Integrated Device Technology (IDT)
分类:Memory
-
7130SA55TF8
Integrated Device Technology (IDT)
分类:Memory
-
7142SA35J
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S166PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71V67903S75BQI
Integrated Device Technology (IDT)
分类:Memory
-
7024L35J8
Integrated Device Technology (IDT)
分类:Memory
-
7140SA25PF8
Integrated Device Technology (IDT)
分类:Memory
-
7025S25J
Integrated Device Technology (IDT)
分类:Memory
-
7133SA55PF
Integrated Device Technology (IDT)
分类:Memory
-
71V2556SA133BG
Integrated Device Technology (IDT)
分类:Memory
-
70V28L15PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S80BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V65903S85BG
Integrated Device Technology (IDT)
分类:Memory
-
70T3519S133BFGI
Integrated Device Technology (IDT)
分类:Memory
-
7130SA20TF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71321LA55J
Integrated Device Technology
分类:Memory
-
71V416L15PHI
Integrated Device Technology
分类:Memory
-
5962-8855201XA
Integrated Device Technology
分类:Memory
-
IDT71256SA15YG
Integrated Device Technology
分类:Memory
-
70V9289L7PRFG
Integrated Device Technology
分类:Memory
-
5962-8976408MYA
Integrated Device Technology
分类:Memory
-
IDT70V24S55PF
Integrated Device Technology
分类:Memory
-
5962-9166203MYA
Integrated Device Technology
分类:Memory