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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V261L25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 140mA | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.003A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 7016L12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 275mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 12 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 7016S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 265mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 25 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 70V3579S4DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 460mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 133MHz | COMMERCIAL | Parallel | 128kB | 2 | 7.5 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 70V9269L12PRFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 50MHz | INDUSTRIAL | Parallel | 32kB | 2 | 12 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.015A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 7140SA25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 220mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 25 ns | 1KX8 | 3-STATE | 10b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 70T3599S133BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 34b | 4.5 Mb | COMMON | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 71321SA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 20 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 709079L9PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 350mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 40MHz | 20 | 5V | COMMERCIAL | Parallel | 2 | 20 ns | 3-STATE | 30b | 256 kb | 0.005A | COMMON | Synchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||
 | 7134SA45J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 240mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 45 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 70V9079L12PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | INDUSTRIAL | Parallel | 32kB | 2 | 12 ns | 3-STATE | 15b | 256 kb | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 71V321L25JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 130mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | J BEND | 225 | 1 | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 70V34L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 185mA | RAM, SDR, SRAM | Bulk | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 9kB | 2 | 15 ns | 4KX18 | 3-STATE | 12b | 72 kb | COMMON | Asynchronous | 18b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 70V06S20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 7034S20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 290mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 20 ns | 4KX18 | 3-STATE | 24b | 72 kb | 0.015A | COMMON | Asynchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 7015S12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 325mA | RAM, SDR, SRAM | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 80 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 12 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 符合RoHS标准 | 含铅 | ||||||||
 | 7038L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 300mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 2 | 20 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.003A | COMMON | Asynchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 70V3569S6BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 310mA | RAM, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 83.3MHz | 20 | COMMERCIAL | Parallel | 2 | 6 ns | 16KX36 | 3-STATE | 14b | 576 kb | 0.015A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 71V321S35TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 125mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | BATTERY BACKUP;AUTOMATIC POWER DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 7130SA100JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 190mA | RAM, SDR, SRAM | 2013 | 活跃 | 85°C | -40°C | 5V | Parallel | 1kB | 2 | 100 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 70V9279S9PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 260mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 0.5mm | 40MHz | COMMERCIAL | Parallel | 64kB | 2 | 9 ns | 3-STATE | 30b | 512 kb | 0.005A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 7008S15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 365mA | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 15 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 71V3557S85BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 235mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 91MHz | 20 | INDUSTRIAL | Parallel | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 70T3519S133BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 208 | 133MHz | RAM, SDR, SRAM | 2009 | 活跃 | 85°C | -40°C | 2.5V | 133MHz | Parallel | 1.1MB | 2 | 4.2 ns | 36b | 9 Mb | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||
 | 7025S17J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 310mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 16kB | 2 | 17 ns | 26b | 128 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 |
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70V261L25PF
Integrated Device Technology (IDT)
分类:Memory
-
7016L12PF
Integrated Device Technology (IDT)
分类:Memory
-
7016S25PF
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S4DR
Integrated Device Technology (IDT)
分类:Memory
-
70V9269L12PRFI8
Integrated Device Technology (IDT)
分类:Memory
-
7140SA25PF
Integrated Device Technology (IDT)
分类:Memory
-
70T3599S133BFI
Integrated Device Technology (IDT)
分类:Memory
-
71321SA20PF8
Integrated Device Technology (IDT)
分类:Memory
-
709079L9PF8
Integrated Device Technology (IDT)
分类:Memory
-
7134SA45J
Integrated Device Technology (IDT)
分类:Memory
-
70V9079L12PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V321L25JI8
Integrated Device Technology (IDT)
分类:Memory
-
70V34L15PF
Integrated Device Technology (IDT)
分类:Memory
-
70V06S20PF
Integrated Device Technology (IDT)
分类:Memory
-
7034S20PF8
Integrated Device Technology (IDT)
分类:Memory
-
7015S12PF
Integrated Device Technology (IDT)
分类:Memory
-
7038L20PF
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S6BF8
Integrated Device Technology (IDT)
分类:Memory
-
71V321S35TF8
Integrated Device Technology (IDT)
分类:Memory
-
7130SA100JI8
Integrated Device Technology (IDT)
分类:Memory
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70V9279S9PRF
Integrated Device Technology (IDT)
分类:Memory
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7008S15PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S85BGI8
Integrated Device Technology (IDT)
分类:Memory
-
70T3519S133BFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7025S17J8
Integrated Device Technology (IDT)
分类:Memory