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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71321LA20TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 200mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 备用电池 | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 7008S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 270mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 55 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 71V3556SA133BQGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 310mA | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | INDUSTRIAL | Parallel | 1 | 4.2 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71421SA55JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 190mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 71V3559S75BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 275mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 100MHz | COMMERCIAL | Parallel | 1 | 7.5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 71V547S80PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | 95MHz | RAM, SDR, SRAM | Tape & Reel | 2015 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | FLAT | 260 | 1 | 0.635mm | 95MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||
 | 71V432S5PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 200mA | 100MHz | RAM, SDR, SRAM | 2013 | e3 | yes | Discontinued | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 128kB | 1 | 5 ns | 32KX32 | 3-STATE | 15b | 1 Mb | COMMON | Synchronous | 32b | 3.63V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||
 | 71T75602S100BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 175mA | RAM, SRAM | Tape & Reel | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 100MHz | COMMERCIAL | Parallel | 1 | 5 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V3556SA133BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 300mA | 133MHz | RAM, SDR, SRAM | 2015 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71321SA55TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 155mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 70V08L20PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 280mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 64kB | 2 | 20 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 709349L6PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 430mA | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 52.6MHz | 30 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 6.5 ns | 4KX18 | 3-STATE | 24b | 72 kb | 0.003A | COMMON | Synchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||
 | 70V7519S166DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 790mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 166MHz | 20 | INDUSTRIAL | Parallel | 1.1MB | 2 | 20 ns | 3-STATE | 36b | 9 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 70V9099L9PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 40MHz | 20 | INDUSTRIAL | Parallel | 2 | 20 ns | 3-STATE | 17b | 1 Mb | COMMON | Synchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 70V3319S133BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 480mA | 133MHz | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 480mA | INDUSTRIAL | Parallel | 512kB | 2 | 4.2 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.4mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 7132LA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 70V9279L7PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 290mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 0.5mm | 83.3MHz | COMMERCIAL | Parallel | 64kB | 2 | 7 ns | 3-STATE | 30b | 512 kb | 0.003A | COMMON | Synchronous | 16b | 3V | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 70261S35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 295mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 71V65703S85BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 225mA | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH | 3.3V | BOTTOM | BALL | 260 | 1 | 91MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 8.5 ns | 256KX36 | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
 | 70V631S12PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 465mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | COMMERCIAL | Parallel | 512kB | 2 | 12 ns | 3-STATE | 36b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 70V3569S4BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 20 | COMMERCIAL | Parallel | 72kB | 2 | 7.5 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.015A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 70T659S15BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 305mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 15 ns | 3-STATE | 34b | 4.5 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 709089S12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 345mA | RAM, SDR, SRAM | 2010 | no | 活跃 | 70°C | 0°C | 5V | 33.3MHz | 345mA | Parallel | 64kB | 2 | 12 ns | 32b | 512 kb | Synchronous | 8b | 5.5V | 4.5V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 70V9089L12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 205mA | RAM, SDR, SRAM | Bulk | 2009 | no | 活跃 | 70°C | 0°C | 3.3V | 33.3MHz | Parallel | 64kB | 2 | 12 ns | 32b | 512 kb | Synchronous | 8b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 70V7339S133BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 675mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | INDUSTRIAL | Parallel | 1.1MB | 2 | 25 ns | 3-STATE | 38b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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71321LA20TF
Integrated Device Technology (IDT)
分类:Memory
-
7008S55PF
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA133BQGI8
Integrated Device Technology (IDT)
分类:Memory
-
71421SA55JI
Integrated Device Technology (IDT)
分类:Memory
-
71V3559S75BG8
Integrated Device Technology (IDT)
分类:Memory
-
71V547S80PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71V432S5PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71T75602S100BG8
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA133BG8
Integrated Device Technology (IDT)
分类:Memory
-
71321SA55TF8
Integrated Device Technology (IDT)
分类:Memory
-
70V08L20PFI8
Integrated Device Technology (IDT)
分类:Memory
-
709349L6PFG
Integrated Device Technology (IDT)
分类:Memory
-
70V7519S166DR
Integrated Device Technology (IDT)
分类:Memory
-
70V9099L9PFI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3319S133BFI
Integrated Device Technology (IDT)
分类:Memory
-
7132LA20J
Integrated Device Technology (IDT)
分类:Memory
-
70V9279L7PRF
Integrated Device Technology (IDT)
分类:Memory
-
70261S35PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V65703S85BGG8
Integrated Device Technology (IDT)
分类:Memory
-
70V631S12PRF
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S4BF
Integrated Device Technology (IDT)
分类:Memory
-
70T659S15BC8
Integrated Device Technology (IDT)
分类:Memory
-
709089S12PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V9089L12PF
Integrated Device Technology (IDT)
分类:Memory
-
70V7339S133BCI
Integrated Device Technology (IDT)
分类:Memory