品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

频率

时间@峰值回流温度-最大值(s)

电源

温度等级

界面

内存大小

端口的数量

访问时间

组织结构

输出特性

地址总线宽度

密度

待机电流-最大值

筛选水平

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

70V9169L9PF
70V9169L9PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

230mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

40MHz

20

COMMERCIAL

Parallel

18kB

2

9 ns

16KX9

3-STATE

28b

144 kb

0.003A

COMMON

Synchronous

9b

3V

3.6V

3V

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V08S15PF
70V08S15PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

260mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

64kB

2

15 ns

64KX8

3-STATE

32b

512 kb

0.006A

COMMON

Asynchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7134SA45P
7134SA45P
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

PDIP

48

240mA

RAM, SDR, SRAM

Bulk

2013

Discontinued

70°C

0°C

5V

Parallel

4kB

2

45 ns

24b

32 kb

Asynchronous

8b

5.5V

4.5V

61.7mm

15.24mm

3.8mm

符合RoHS标准

含铅

7133LA55FB
7133LA55FB
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

68

RAM, SRAM

Military grade

Bulk

2013

e0

no

活跃

1 (Unlimited)

68

Tin/Lead (Sn/Pb)

125°C

-55°C

5V

QUAD

FLAT

240

1

5V

MILITARY

Parallel

2

3-STATE

22b

32 kb

0.004A

MIL-PRF-38535

55 ns

COMMON

2V

24mm

24mm

2mm

符合RoHS标准

含铅

70V9179L9PFI
70V9179L9PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

280mA

RAM, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

40MHz

20

INDUSTRIAL

Parallel

2

20 ns

3-STATE

30b

288 kb

0.006A

COMMON

Synchronous

9b

3V

3.6V

3V

14mm

14mm

1.4mm

符合RoHS标准

含铅

7006S15PF
7006S15PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

310mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

COMMERCIAL

Parallel

16kB

2

15 ns

16KX8

3-STATE

28b

128 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7016L35PF
7016L35PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

80

210mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

80

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE

5V

QUAD

鸥翼

240

1

0.65mm

20

5V

COMMERCIAL

Parallel

18kB

2

35 ns

16KX9

3-STATE

28b

144 kb

0.005A

COMMON

Asynchronous

9b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7134LA35J8
7134LA35J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

210mA

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

AUTOMATIC POWER-DOWN; BATTERY BACKUP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4kB

2

35 ns

4KX8

3-STATE

24b

32 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

71342LA25PFI8
71342LA25PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

260mA

RAM, SDR, SRAM

2001

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

INDUSTRIAL

Parallel

4kB

2

25 ns

4KX8

3-STATE

12b

32 kb

0.0015A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V24L20J8
70V24L20J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

175mA

RAM, SDR, SRAM

2004

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

J BEND

225

1

COMMERCIAL

Parallel

8kB

2

20 ns

4KX16

3-STATE

24b

64 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

71342SA35J8
71342SA35J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

260mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4kB

2

35 ns

4KX8

3-STATE

24b

32 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

70V25S20J8
70V25S20J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

200mA

RAM, SRAM

Tape & Reel

2008

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

J BEND

225

1

COMMERCIAL

Parallel

2

20 ns

8KX16

3-STATE

26b

128 kb

0.005A

COMMON

Asynchronous

16b

3V

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

70V38L15PFG
70V38L15PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SDR, SRAM

2009

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

QUAD

鸥翼

260

1

0.5mm

30

COMMERCIAL

Parallel

128kB

2

15 ns

64KX18

3-STATE

32b

1.1 Mb

0.003A

COMMON

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

无铅

7035L15PF8
7035L15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

260mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

18kB

2

15 ns

8KX8

3-STATE

13b

144 kb

0.0015A

COMMON

Asynchronous

18b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70T631S15BF8
70T631S15BF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

208

305mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn63Pb37)

70°C

0°C

2.5V

BOTTOM

BALL

225

1

0.8mm

COMMERCIAL

Parallel

2

15 ns

3-STATE

18b

4 Mb

0.01A

COMMON

Asynchronous

18b

2.6V

2.4V

1.5mm

15mm

15mm

1.4mm

符合RoHS标准

含铅

70V3389S4BC8
70V3389S4BC8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

460mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

BOTTOM

BALL

225

1

1mm

133MHz

COMMERCIAL

Parallel

2

4.2 ns

64KX18

3-STATE

32b

1.1 Mb

0.015A

COMMON

Synchronous

18b

3.45V

3.15V

1.5mm

17mm

17mm

1.4mm

符合RoHS标准

含铅

7008L20J
7008L20J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

285mA

RAM, SDR, SRAM

Bulk

2010

e0

no

活跃

1 (Unlimited)

84

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

64kB

2

20 ns

64KX8

3-STATE

32b

512 kb

0.005A

COMMON

Asynchronous

8b

5.5V

4.5V

4.57mm

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

70V09L20PFGI
70V09L20PFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SRAM

2009

e3

yes

3 (168 Hours)

100

Matte Tin (Sn)

85°C

-40°C

3.3V

QUAD

鸥翼

260

1

0.5mm

30

INDUSTRIAL

Parallel

128kB

2

20 ns

3-STATE

34b

1 Mb

0.003A

COMMON

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

无铅

70T3799MS133BBGI
70T3799MS133BBGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

14 Weeks

表面贴装

BGA

324

900mA

133MHz

RAM, SDR, SRAM

2010

e1

yes

活跃

3 (168 Hours)

324

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

PIPELINED OR FLOW-THROUGH ARCHITECTURE

2.5V

BOTTOM

BALL

260

1

1mm

133MHz

30

INDUSTRIAL

Parallel

1.1MB

2

4.2 ns

3-STATE

17b

9 Mb

COMMON

Synchronous

72b

2.6V

2.4V

19mm

19mm

1.76mm

符合RoHS标准

无铅

71T75802S150BGI8
71T75802S150BGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

BGA

119

235mA

RAM, SRAM

Tape & Reel

2012

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

85°C

-40°C

流水线结构

2.5V

BOTTOM

BALL

225

1

150MHz

INDUSTRIAL

Parallel

1

3.8 ns

3-STATE

20b

18 Mb

0.045A

COMMON

Synchronous

18b

2.38V

2.625V

2.375V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

含铅

70V9089S12PF8
70V9089S12PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

240mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

33.3MHz

20

COMMERCIAL

Parallel

2

25 ns

64KX8

3-STATE

32b

512 kb

0.005A

COMMON

Synchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7016L25J
7016L25J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

68

220mA

RAM, SDR, SRAM

2009

e0

no

活跃

1 (Unlimited)

68

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

18kB

2

25 ns

16KX9

3-STATE

14b

144 kb

0.005A

COMMON

Asynchronous

9b

5.5V

4.5V

4.57mm

24mm

24mm

3.63mm

符合RoHS标准

含铅

7140LA35J8
7140LA35J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

PLCC

YES

52

RAM, SDR, SRAM

2013

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

1kB

2

35 ns

1KX8

3-STATE

20b

8 kb

0.0015A

COMMON

2V

5.5V

4.5V

4.57mm

19mm

19mm

3.63mm

符合RoHS标准

含铅

7140SA35PF8
7140SA35PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

165mA

RAM, SDR, SRAM

2013

活跃

70°C

0°C

5V

Parallel

1kB

2

35 ns

10b

8 kb

Asynchronous

8b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

71342LA25PF
71342LA25PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

240mA

RAM, SDR, SRAM

2009

活跃

70°C

0°C

5V

Parallel

4kB

2

25 ns

24b

32 kb

Asynchronous

8b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅