ABB AFN112-CSJ

包装/外壳

SSOT-6

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.6 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.001270 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

15 S

Channel Mode

Enhancement

Part # Aliases

FDC638P_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

14 nC

Tradename

PowerTrench

Rds On - Drain-Source Resistance

48 mOhms

RoHS

Details

Typical Turn-Off Delay Time

33 ns

Id - Continuous Drain Current

4.5 A

Mounting

Surface

系列

FDC638P

包装

MouseReel

终端

Screw

类型

MOSFET

子类别

MOSFETs

技术

Si

样式

Enclosed

配置

Single

通道数量

1 Channel

上升时间

9 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

线圈电压

460-480 VAC

产品

MOSFET小信号

NEMA帧大小

1

产品类别

MOSFET

辅助触点

1NO, 1NC

行业标准

NEMA

宽度

1.6 mm

高度

1.1 mm

长度

2.9 mm