Advanced Power Electronics Corp AP6982GN2-HF
- 收藏
- 对比
AP6982GN2-HF
54-AP6982GN2-HF
晶体管 - 特殊用途
--
大陆
立即发货

Description: TRANSISTOR POWER, FET, FET General Purpose Power
1最小包装量--
AP6982GN2-HF详情
Advanced Power Electronics Corp AP6982GN2-HF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
6
晶体管元件材料
SILICON
Rohs Code
有
Part Life Cycle Code
接触制造商
Ihs Manufacturer
ADVANCED POWER ELECTRONICS CORP
Package Description
SMALL OUTLINE, S-PDSO-N6
Drain Current-Max (ID)
11 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
小概要
ECCN 代码
EAR99
端子位置
DUAL
终端形式
无铅
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
S-PDSO-N6
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.0125 Ω
脉冲漏极电流-最大值(IDM)
40 A
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2.4 W
AP6982GN2-HF拓展信息
Advanced Power Technology
Advanced Power Electronics Corp
Advanced Power Technology
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Advanced Power Electronics Corp







哦! 它是空的。