Advanced Power Technology APT5025AN
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APT5025AN
42-APT5025AN
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 3 PIN
1最小包装量--
APT5025AN详情
Advanced Power Technology APT5025AN重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
2
晶体管元件材料
SILICON
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, O-MBFM-P2
Drain Current-Max (ID)
20 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
HTS代码
8541.29.00.95
端子位置
BOTTOM
终端形式
PIN/PEG
Reach合规守则
unknown
JESD-30代码
O-MBFM-P2
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-204AA
漏极-源极导通最大电阻
0.25 Ω
脉冲漏极电流-最大值(IDM)
80 A
DS 击穿电压-最小值
500 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
230 W
环境耗散-最大值
230 W
APT5025AN拓展信息
Advanced Power Technology
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