AirBorn VSF-05-50-50-00-N

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

4.1 ns

Vgs th - Gate-Source Threshold Voltage

950 mV

Qualification

AEC-Q101

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

12000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4 S

Channel Mode

Enhancement

Part # Aliases

BSS214N SP000928936 H6327 BSS214NH6327XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

800 pC

Rds On - Drain-Source Resistance

140 mOhms

RoHS

Details

Typical Turn-Off Delay Time

6.8 ns

Id - Continuous Drain Current

1.5 A

Tradename

verSI

系列

BSS214

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

7.8 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

1.3 mm

高度

1.1 mm

长度

2.9 mm