WGDXA160PSY详情
AirBorn WGDXA160PSY重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
235 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.073899 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
120 mOhms
RoHS
Details
Id - Continuous Drain Current
30 A
系列
600V SJ MOSFET
包装
MouseReel
子类别
MOSFETs
技术
Si
通道数量
1 Channel
产品类别
MOSFET
产品
MOSFET
产品类别
MOSFET
WGDXA160PSY拓展信息








哦! 它是空的。