Alpha and Omega Semiconductor, Inc. AOD536

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

AlphaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.2

Maximum Continuous Drain Current (A)

46

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

8.5@10V

Typical Gate Charge @ Vgs (nC)

14@10V|[email protected]

Typical Gate Charge @ 10V (nC)

14

Typical Input Capacitance @ Vds (pF)

1140@15V

Maximum Power Dissipation (mW)

6200

Typical Fall Time (ns)

4

Typical Rise Time (ns)

13.5

Typical Turn-Off Delay Time (ns)

18.5

Typical Turn-On Delay Time (ns)

7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.29

Package Width

6.1

Package Length

6.6

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

包装

卷带

零件状态

NRND

引脚数量

3

配置

Single

信道型

N