Alpha and Omega Semiconductor, Inc. AON5802BG
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AON5802BG
110-AON5802BG
晶体管 - FET,MOSFET - 单个
6-WFDFN Exposed Pad
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AON5802BG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Alpha and Omega Semiconductor, Inc. stock available at utmel
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AON5802BG详情
Alpha and Omega Semiconductor, Inc. AON5802BG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-WFDFN Exposed Pad
供应商器件包装
6-DFN-EP (2x5)
Package/Enclosure
DFN 3x3 EP
Drain-source voltage Vds
30V
Gate voltage Vgs
±20V
Continuous Drain Current Id
34A
Pd-power dissipation (Max)
30W
Rds On(Max)@Id,Vgs
3.7mΩ@20A,10V
Package
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25℃
10A (Ta)
厂商
Alpha & Omega Semiconductor Inc.
Product Status
Obsolete
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.5V @ 250µA
Operating temperature
-55°C~150°C
系列
-
功率 - 最大
3.1W (Ta)
fet type
N-Channel
输入电容(Ciss)(Max)@Vds
1050pF @ 15V
门极电荷(Qg)(最大)@Vgs
32nC @ 10V
漏源电压 (Vdss)
30V
场效应管特性
Standard
AON5802BG拓展信息
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.







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