Alpha and Omega Semiconductor, Inc. AON6552

表面安装

YES

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

AlphaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.2

Maximum Continuous Drain Current (A)

23

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

5@10V

Typical Gate Charge @ Vgs (nC)

15.5@10V|[email protected]

Typical Gate Charge @ 10V (nC)

15.5

Typical Input Capacitance @ Vds (pF)

1037@15V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

4.3

Typical Rise Time (ns)

3.3

Typical Turn-Off Delay Time (ns)

18

Typical Turn-On Delay Time (ns)

5.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.95(Max)

Package Width

5.55

Package Length

5.2

PCB changed

8

Standard Package Name

DFN

Supplier Package

DFN EP

Lead Shape

No Lead

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

AON6552

Manufacturer

Alpha & Omega Semiconductor

Part Life Cycle Code

活跃

Ihs Manufacturer

ALPHA & OMEGA SEMICONDUCTOR LTD

Risk Rank

1.71

零件状态

活跃

子类别

FET 通用电源

Reach合规守则

compliant

引脚数量

8

配置

单四漏三源

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

30 A

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

25 W