Alpha and Omega Semiconductor, Inc. AON7530

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

8-DFN-EP (3x3)

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

AlphaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.2

Maximum Continuous Drain Current (A)

30

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

4.7@10V

Typical Gate Charge @ Vgs (nC)

18.8@10V|[email protected]

Typical Gate Charge @ 10V (nC)

18.8

Typical Input Capacitance @ Vds (pF)

1320@15V

Maximum Power Dissipation (mW)

4100

Typical Fall Time (ns)

4

Typical Rise Time (ns)

3

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.78

Package Width

3

Package Length

3

PCB changed

8

Supplier Package

DFN-A EP

Package

Tape & Reel (TR)

Base Product Number

AON75

Current - Continuous Drain (Id) @ 25℃

24A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Alpha & Omega Semiconductor Inc.

Power Dissipation (Max)

24W

Product Status

活跃

操作温度

-55°C ~ 150°C

系列

-

零件状态

NRND

技术

MOSFET (Metal Oxide)

引脚数量

8

配置

单四漏三源

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.7mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 250µA

输入电容(Ciss)(Max)@Vds

1320 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

18.8 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-