Alpha and Omega Semiconductor, Inc. AONS66916

安装类型

表面贴装

包装/外壳

8-PowerSMD, Flat Leads

供应商器件包装

8-DFN (5x6)

Lead Shape

No Lead

Supplier Package

DFN EP

Standard Package Name

DFN

PCB changed

8

Package Length

5.2

Package Width

5.55

Package Height

0.95(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

18

Typical Turn-Off Delay Time (ns)

30

Typical Rise Time (ns)

7

Typical Fall Time (ns)

10

Maximum Power Dissipation (mW)

6200

Typical Input Capacitance @ Vds (pF)

5325@50V

Typical Gate Charge @ 10V (nC)

67

Typical Gate Charge @ Vgs (nC)

67@10V

Maximum Drain Source Resistance (MOhm)

3.6@10V

Maximum Continuous Drain Current (A)

30

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

100

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

Trench Power AlphaSGT

Category

功率MOSFET

PPAP

无

Automotive

无

SVHC Exceeds Threshold

有

SVHC

有

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

符合免除

Package

Tape & Reel (TR)

Base Product Number

AONS669

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Alpha & Omega Semiconductor Inc.

Power Dissipation (Max)

215W (Tc)

Product Status

活跃

包装

卷带

操作温度

-55°C ~ 150°C (TJ)

系列

AlphaSGT™

零件状态

活跃

技术

MOSFET (Metal Oxide)

引脚数量

8

配置

单四漏三源

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.6mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

3.6V @ 250µA

输入电容(Ciss)(Max)@Vds

5325 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

95 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-