Alpha and Omega Semiconductor, Inc. AONS66917

安装类型

表面贴装

包装/外壳

8-PowerSMD, Flat Leads

供应商器件包装

8-DFN (5x6)

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

AlphaSGT

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.8

Maximum Continuous Drain Current (A)

100

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

3.5@10V

Typical Gate Charge @ Vgs (nC)

80@10V|[email protected]

Typical Gate Charge @ 10V (nC)

80

Typical Input Capacitance @ Vds (pF)

5940@50V

Maximum Power Dissipation (mW)

215000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

6.5

Typical Turn-Off Delay Time (ns)

46

Typical Turn-On Delay Time (ns)

16.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.95(Max)

Package Width

5.55

Package Length

5.2

PCB changed

8

Supplier Package

DFN EP

Package

Tape & Reel (TR)

Base Product Number

AONS669

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Alpha & Omega Semiconductor Inc.

Power Dissipation (Max)

6.2W (Ta), 215W (Tc)

Product Status

活跃

操作温度

-55°C ~ 150°C (TJ)

系列

AlphaSGT™

零件状态

活跃

技术

MOSFET (Metal Oxide)

引脚数量

8

配置

单四漏三源

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.5mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 250µA

输入电容(Ciss)(Max)@Vds

5940 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

115 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-