Alpha and Omega Semiconductor, Inc. AONY36356

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

8-DFN (5x6)

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±12@Q 1|±20@Q 2

Maximum Continuous Drain Current (A)

17.5@Q 1|24@Q 2

Maximum Drain Source Resistance (MOhm)

6.1@10V@Q 1|3.8@10V@Q 2

Typical Gate Charge @ Vgs (nC)

20@10V@Q 1|42@10V@Q 2

Typical Input Capacitance @ Vds (pF)

20@10V@Q 1|42@10V@Q 2

Maximum Power Dissipation (mW)

2900@Q 1|3400@Q 2

Typical Fall Time (ns)

5.5@Q 2|2.5@Q 1

Typical Rise Time (ns)

3.5@Q 1|3@Q 2

Typical Turn-Off Delay Time (ns)

20.5@Q 1|34@Q 2

Typical Turn-On Delay Time (ns)

7@Q 1|8@Q 2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.95(Max)

Package Width

5.55

Package Length

5.2

PCB changed

8

Supplier Package

DFN-B EP

Package

Tape & Reel (TR)

Base Product Number

AONY363

Current - Continuous Drain (Id) @ 25℃

17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)

厂商

Alpha & Omega Semiconductor Inc.

Product Status

活跃

操作温度

-55°C ~ 150°C (TJ)

系列

-

零件状态

活跃

技术

MOSFET (Metal Oxide)

引脚数量

8

配置

Dual

功率 - 最大

2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)

Rds On(Max)@Id,Vgs

6.1mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.1V @ 250µA

输入电容(Ciss)(Max)@Vds

920pF @ 15V

门极电荷(Qg)(最大)@Vgs

20nC @ 10V

漏源电压 (Vdss)

30V

信道型

N

场效应管特性

Standard