Alpha and Omega Semiconductor, Inc. AOT2146L

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

42

Maximum Drain Source Resistance (MOhm)

2.8@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|50@10V

Typical Gate Charge @ 10V (nC)

50

Typical Input Capacitance @ Vds (pF)

3830@20V

Maximum Power Dissipation (mW)

119000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.14

Package Width

4.45

Package Length

10.03

PCB changed

3

Tab

Tab

Supplier Package

TO-220

Package

Tape & Reel (TR)

Base Product Number

AOT2146

Current - Continuous Drain (Id) @ 25℃

42A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Alpha & Omega Semiconductor Inc.

Power Dissipation (Max)

8.3W (Ta), 119W (Tc)

Product Status

活跃

操作温度

-55°C ~ 150°C (TJ)

系列

AlphaSGT™

零件状态

活跃

技术

MOSFET (Metal Oxide)

引脚数量

3

配置

Single

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.8mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

3830 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

70 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-