Alpha & Omega Semiconductor Inc. AONT21313C
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AONT21313C
110-AONT21313C
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

MOSFET P-CH 6DFN
1最小包装量--
AONT21313C详情
Alpha & Omega Semiconductor Inc. AONT21313C重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
Current - Continuous Drain (Id) @ 25℃
8A Ta
Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V
Power Dissipation (Max)
2.8W Ta
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.3V @ 250μA
操作温度
-55°C~150°C TJ
零件状态
活跃
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
32m Ω @ 8A, 10V
输入电容(Ciss)(Max)@Vds
530pF @ 15V
门极电荷(Qg)(最大)@Vgs
14.5nC @ 10V
漏源电压 (Vdss)
30V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
AONT21313C拓展信息
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.







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