AMD KSH112-I

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

KSH112-I

Part Life Cycle Code

活跃

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

IPAK-3

Risk Rank

5.72

Number of Elements

1

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

IN-LINE

Transition Frequency-Nom (fT)

25 MHz

附加功能

BUILT IN BIAS RESISTOR RATIO IS 0.06

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

compliant

JESD-30代码

R-PSIP-T3

配置

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

极性/通道类型

NPN

集电极电流-最大值(IC)

2 A

最小直流增益（hFE）

200

集电极-发射器电压-最大值

100 V