C6G114SCG详情
Amphenol C6G114SCG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
H-37248C-4
Vds - Drain-Source Breakdown Voltage
125 V
Shipping Restrictions
This product may require additional documentation to export from the United States.
Pd - Power Dissipation
-
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 225 C
Minimum Operating Temperature
-
Factory Pack QuantityFactory Pack Quantity
250
Mounting Styles
法兰安装
Forward Transconductance - Min
-
Manufacturer
Wolfspeed
Brand
Wolfspeed
Rds On - Drain-Source Resistance
-
RoHS
Details
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Id - Continuous Drain Current
5.4 A
包装
Reel
应用
Cellular Power Amplifier
子类别
Transistors
技术
GaN-on-SiC
工作频率
3400 MHz to 3600 MHz
输出功率
280 W
产品类别
射频JFET晶体管
晶体管类型
HEMT
增益
13.5 dB
产品类别
射频JFET晶体管
C6G114SCG拓展信息








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