HKC09P-18-12P详情
Amphenol HKC09P-18-12P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
D2PAK-3
Vds - Drain-Source Breakdown Voltage
800 V
Typical Turn-On Delay Time
16 ns
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
3.13 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.139332 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
800
Mounting Styles
SMD/SMT
Forward Transconductance - Min
3.8 S
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
3.6 Ohms
RoHS
Details
Typical Turn-Off Delay Time
35 ns
Id - Continuous Drain Current
3.9 A
系列
FQB4N80
包装
MouseReel
类型
MOSFET
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
45 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
9.65 mm
高度
4.83 mm
长度
10.67 mm
HKC09P-18-12P拓展信息








哦! 它是空的。