Ampleon BLC10M6SX200Z

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

20

Maximum Gate Source Leakage Current (nA)

420

Maximum IDSS (uA)

4.2

Maximum Drain Source Resistance (mOhm)

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Typical Forward Transconductance (S)

17

Output Power (W)

200(Typ)

Typical Power Gain (dB)

19.5

Maximum Frequency (MHz)

450

Minimum Frequency (MHz)

425

Typical Drain Efficiency (%)

29.5

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT1270-1

Military

无

Mounting

表面贴装

Package Height

4.01(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

包装

Tray

零件状态

LTB

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

2-Carrier W-CDMA