Ampleon BLC2425M10LS250

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.68

Maximum VSWR

20

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

40.5(Typ)@6.43V

Typical Forward Transconductance (S)

22.6

Output Power (W)

260(Typ)

Typical Power Gain (dB)

14.4

Maximum Frequency (MHz)

2500

Minimum Frequency (MHz)

2400

Typical Drain Efficiency (%)

68.7

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT1270-1

Military

无

Mounting

表面贴装

Package Height

4.01(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

零件状态

活跃

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

Pulsed RF Class-AB

RoHS状态

符合RoHS标准