Ampleon BLC9G20LS-361AVT

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.5

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

1.27

Output Power (W)

360

Typical Power Gain (dB)

15.7

Maximum Frequency (MHz)

1990

Minimum Frequency (MHz)

1805

Typical Drain Efficiency (%)

47.5

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Military

无

零件状态

LTB

配置

双共源

信道型

N

操作方式

1-Carrier W-CDMA