Ampleon BLC9G27XS-380AVT

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.5

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

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Typical Forward Transconductance (S)

9

Output Power (W)

63(Typ)

Typical Power Gain (dB)

15.2

Maximum Frequency (MHz)

2690

Minimum Frequency (MHz)

2496

Typical Drain Efficiency (%)

41.5

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

125

Supplier Package

DFM

Military

无

Mounting

表面贴装

Package Height

4.52(Max)

Package Length

32.33(Max)

Package Width

10.23(Max)

PCB changed

7

零件状态

活跃

类型

MOSFET

引脚数量

7

配置

双共源

信道型

N

操作方式

脉冲CW

RoHS状态

符合RoHS标准