Ampleon BLF10H6600PS

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

110

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

40

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

143(Typ)@6.15V

Typical Input Capacitance @ Vds (pF)

220@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.2@50V

Typical Output Capacitance @ Vds (pF)

74@50V

Output Power (W)

600(Typ)

Typical Power Gain (dB)

20.8|19.8

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

400

Typical Drain Efficiency (%)

58

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT-539B

Military

无

Mounting

表面贴装

Package Height

4.7(Max)

Package Length

32.77(Max)

Package Width

10.29(Max)

PCB changed

5

Package Description

,

Manufacturer Part Number

BLF10H6600PS

Manufacturer

Ampleon

Part Life Cycle Code

接触制造商

Ihs Manufacturer

AMPLEON NETHERLANDS B V

Risk Rank

5.21

零件状态

活跃

Reach合规守则

unknown

引脚数量

5

配置

双共源

信道型

N

操作方式

Pulsed RF Class-AB|2-Tone Class-AB

RoHS状态

符合RoHS标准