Ampleon BLF1721M8LS200

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

420

Maximum IDSS (uA)

4.2

Maximum Drain Source Resistance (mOhm)

45(Typ)@6V

Typical Forward Transconductance (S)

2.2

Output Power (W)

200

Typical Power Gain (dB)

19

Maximum Frequency (MHz)

2100

Minimum Frequency (MHz)

1700

Typical Drain Efficiency (%)

28.5

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT-502B

Military

无

Mounting

表面贴装

Package Height

4.72(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

包装

Bulk

零件状态

活跃

引脚数量

3

配置

Single

信道型

N

操作方式

2-Carrier W-CDMA

RoHS状态

符合RoHS标准