Ampleon BLF182XR

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

135

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.25

Maximum VSWR

65

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

430(Typ)@6V

Typical Input Capacitance @ Vds (pF)

116@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.7@50V

Typical Output Capacitance @ Vds (pF)

37@50V

Output Power (W)

250

Typical Power Gain (dB)

28

Maximum Frequency (MHz)

600

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

72

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

CDFM

Military

无

Mounting

Screw

Package Height

4.75(Max)

Package Length

34.16(Max)

Package Width

9.91(Max)

PCB changed

5

Package Description

,

Manufacturer Part Number

BLF182XR

Manufacturer

Ampleon

Part Life Cycle Code

接触制造商

Ihs Manufacturer

AMPLEON NETHERLANDS B V

Risk Rank

5.09

包装

Bulk

零件状态

活跃

Reach合规守则

unknown

引脚数量

5

配置

双共源

信道型

N

操作方式

脉冲射频

RoHS状态

符合RoHS标准