Ampleon BLF647P

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

Channel Mode

Enhancement

ECCN (US)

EAR99

Typical Power Gain (dB)

18|18|18|18|18|18|18|18|18|18|19|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18

Output Power (W)

200

Typical Output Capacitance @ Vds (pF)

30@32V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.3@32V

Typical Input Capacitance @ Vds (pF)

78@32V

Maximum Drain Source Resistance (mOhm)

140(Typ)@6.15V

Maximum IDSS (uA)

1.4

Maximum Gate Source Leakage Current (nA)

50

Maximum VSWR

10

Maximum Gate Threshold Voltage (V)

2.4

Maximum Gate Source Voltage (V)

11

Maximum Drain Source Voltage (V)

65

Process Technology

LDMOS

Number of Elements per Chip

2

Military

无

Supplier Package

CDFM

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

70

Minimum Frequency (MHz)

10

Maximum Frequency (MHz)

1500

Package Width

9.91(Max)

Package Length

34.16(Max)

Package Height

4.75(Max)

Mounting

Screw

PCB changed

5

Package Description

FLANGE MOUNT, R-CDFM-F4

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF647P

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

2

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.63

无铅代码

有

零件状态

活跃

ECCN 代码

EAR99

附加功能

ESD PROTECTED, HIGH RELIABILITY

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

5

JESD-30代码

R-CDFM-F4

配置

双共源

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

65 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

L带

操作方式

CW Class-B|Pulsed RF|Class-AB|2-Tone Class-AB

RoHS状态

符合RoHS标准