Ampleon BLF6G22LS-130F,118

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

10

Maximum Continuous Drain Current (A)

34

Maximum Gate Source Leakage Current (nA)

450

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Reverse Transfer Capacitance @ Vds (pF)

3.15@28V

Typical Forward Transconductance (S)

12

Output Power (W)

30(Typ)

Typical Power Gain (dB)

17

Maximum Frequency (MHz)

2170

Minimum Frequency (MHz)

2110

Typical Drain Efficiency (%)

28.5

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Automotive

Unknown

Supplier Package

SOT-502B

Military

无

Mounting

表面贴装

Package Height

4.72(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

包装

卷带

类型

MOSFET

引脚数量

3

配置

Single

信道型

N

操作方式

2-Carrier W-CDMA