Ampleon BLF879P

表面安装

YES

终端数量

4

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

104

Maximum Gate Source Voltage (V)

±11

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

40

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

120(Typ)@6.15V

Typical Input Capacitance @ Vds (pF)

210@42V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.5@42V

Typical Output Capacitance @ Vds (pF)

72@42V

Output Power (W)

200(Min)

Typical Power Gain (dB)

21

Maximum Frequency (MHz)

860

Minimum Frequency (MHz)

470

Typical Drain Efficiency (%)

47

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-539A

Military

无

Mounting

Screw

Package Height

4.7(Max)

Package Length

41.28(Max)

Package Width

10.29(Max)

PCB changed

5

Package Description

FLANGE MOUNT, R-CDFM-F4

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLF879P

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

2

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.7

零件状态

Obsolete

ECCN 代码

EAR99

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

5

JESD-30代码

R-CDFM-F4

资历状况

不合格

配置

双共源

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

104 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

超高频段

操作方式

2-Tone Class-AB

RoHS状态

符合RoHS标准